Active Member
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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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Bridge Type Rectifier Diode 1N4007 50 to 1000 Volts 1.0 Ampere
Feature
Low coat construction
Low forward voltage drop
Low reverse leakageHigh forward surge current capability
High temperature soldering guaranteed:
260℃/10 secods/.375”(9.5mm)lead leCM GROUPh at 5 lbs(2.3kg) tension
MECHANICAL DATA
Case: Transfer molded plastic
poxy: UL94V-O rate flame retardant
Polarity: Color band denotes cathode end
Lead: Plated axial lead, solderable per MIL-STD-202E method 208C
Mounting position: Any
Weight: 0.012 ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
· Ratings at 25OC ambient temperature unless otherwise specified · Single Phase, half wave, 60Hz, resistive or inductive load · For capacitive load derate current by 20%
| Maximum RMS Voltage | SYMBOLS | 1N4001 | 1N4002 | 1N4003 | 1N4004 | 1N4005 | 1N4006 | 1N4007 | UNIT |
| Maximum DC Blocking Voltage | Vrrm | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current 0.375”(9.5mm) lead leCM GROUPh at TA= 25℃ | Vrms | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Peak Forward Surge Current 8.3mS single half sine wave superimposed on rated load (JEDEC method) | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 100 | V |
| Maximum Instantaneous Forward Voltage @ 1.0A | (Av) | 1.0 | A | ||||||
Maximum DC Reverse TA = 25℃ Current at Rated DC Blocking TA=100V Voltage per element | Ifsm | 5.0 | µA | ||||||
| Vf | 50 | µA | |||||||
| Maximum Full Load Reverse Current, full cycle average 0.375”(9.5mm)lead leCM GROUPh at TL=75℃ | Ir | 30 | µA | ||||||
| Typical Junction Capacitance (Note 1) | Cj | 13 | µA | ||||||
| Typical Thermal Resistance (Note 2) | RθJA | 50 | ℃ /w | ||||||
| Operating Junction Temperature Range | Tj | -55 to +150 | ℃ | ||||||
| Storage Temperature Range | TSTG | -55 to +150 | ℃ | ||||||
Notes:
1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal Resistance from junction to terminal 6.0mm2 copper pads to each terminal.
3. The chip size is 40mil×40mil
