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RB450FT106 Rectifier Diode Schottky barrier diode diode laser hair removal

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Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

Contact name:Doris Guo

Country/Region	china
City & Province	shenzhen

Schottky barrier diode

RB450F

Applications

Low current rectificaton

Features

1) Small mold type. (UMD3)

2) Low I_R

3) High reliability

Construction

Silicon epitaxial planar

Absolute maximum ratings (Ta=25°C)

Parameter	Symbol	Limits	Unit
Reverse voltage (repetitive peak)	V_RM	45	V
Reverse voltage (DC)	V_R	40	V
Average rectified forward current	Io	100	mA
Forward current surge peak (60Hz・1cyc)	I_FSM	1	A
Junction temperature	Tj	125	°C
Storage temperature	Tstg	-40 to +125	°C

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