Active Member
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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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z High breakdown voltage : VDSS = −200 V
z High forward transfer admittance : |Yfs| = 5.0 S (typ.)
z Complementary to 2SK1530
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit |
| Drain−source voltage | VDSS | −200 | V |
| Gate−source voltage | VGSS | ±20 | V |
| Drain current (Note 1) | ID | −12 | A |
| Drain power dissipation (Tc = 25°C) | PD | 150 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | −55 to 150 | °C |
STOCK LIST
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