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IRF3415 Power MOSFET high voltage power mosfet dual power mosfet

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ChongMing Group (HK) Int'l Co., Ltd

IRF3415 Power MOSFET high voltage power mosfet dual power mosfet

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Product Details

STOCK LIST 


AT24C512B-PU4500ATMEL15+DIP-8
BDP9494500 12+SOT-223
BYT01-4004500ST16+NA
BYW96E4500PHILIPS12+SOD64
DF08S/274500VISHAY16+SOP-4
HT9170D4500HOLTEK16+SOP
KST2222AMTF4500FAIRCHILD16+SOT23
L65624500ST16+SOP8
LM1117MP-3.34500NS16+SOT-223
LMC567CN4500NS14+DIP8
MT8870DE4500MT16+DIP
SP208EEA4500SIPEX16+SSOP-24
TDA70504500PHILIPS15+SOP-8
TPN3021RL4500ST16+SOP8
A10134520FSC15+TO-92
ADM485JN4520AD12+DIP-8
LMC6482IM4520NS16+SOP-8
RTL8111B4520REALTEK12+QFN
TPA6017A2PWPR4520TI16+HTSSOP20
LM1086IS-1.84555NS16+TO263
VND8304566ST16+SOP16
L6563D4571ST16+SOP
LP324M4588NS16+TSSOP14
SN75173D4613TI14+SOP-16

 
 
 
 


IRF3415

Power MOSFET high voltage power mosfet dual power mosfet

► Advanced Process Technology
► Dynamic dv/dt Rating
►175°C Operating Temperature
► Fast Switching l Fully Avalanche Rated
 
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
 
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
 
 
 
 
















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