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[China]
Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN
Contact name:Doris Guo
ChongMing Group (HK) Int'l Co., Ltd |
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BUK95/9607-30B
TrenchMOS™ logic level FET
Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
Product availability:
BUK9507-30B in SOT78 (TO-220AB)
BUK9607-30B in SOT404 (D2-PAK).
Features
■ Low on-state resistance
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
Applications
■ Automotive systems
■ 12 V loads
■ Motors, lamps and solenoids
■ General purpose power switching.
Quick reference data
■ EDS(AL)S ≤ 327 mJ
■ RDSon = 5.9 mΩ (typ)
■ ID ≤ 75 A
■ Ptot ≤ 157 W.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 30 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 kΩ | - | 30 | V |
| VGS | gate-source voltage (DC) | - | ±15 | V | |
| ID | drain current (DC) | Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 | [1] - | 108 | A |
| [2] - | 75 | A | |||
Tmb = 100 °C; VGS = 5 V; Figure 2 | [1] - | 75 | A | ||
| IDM | peak drain current | Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 | - | 435 | A |
| Ptot | total power dissipation | Tmb = 25 °C; Figure 1 | - | 157 | W |
| Tstg | storage temperature | -55 | +175 | °C | |
| Tj | junction temperature | -55 | +175 | °C |
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
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