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New & Original Silicon NPN DarliCM GROUPon Power Transistors 2SD2390

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ChongMing Group (HK) Int'l Co., Ltd

New & Original Silicon NPN DarliCM GROUPon Power Transistors 2SD2390

Country/Region china
City & Province shenzhen
Categories Switching Power Supply
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Product Details

 

Silicon NPN DarliCM GROUPon Power Transistors 2SD2390

 

DESCRIPTION

·With TO-3PN package

·Complement to type 2SB1560

·High DC current gain

 

APPLICATIONS

·Audio ,regulator and general purpose

 

PINNING

    PIN      DESCRIPTION
     1  Base
     2

 Collector;connected to

 mounting base

     3  Emitter

 

 

 

 

 

 

CHARACTERISTICS Tj=25℃ unless otherwise specified

 SYMBOL   PARAMETER   CONDITIONS  MIN  TYP.  MAX UNIT
 V(BR)CEO Collector-emitter breakdown voltage IC=30mA ;IB=0  150    V
 VCEsat Collector-emitter saturation voltage IC=7A ;IB=7mA    2.5  V
 VBEsat Base-emitter saturation voltage IC=7A ;IB=7mA    3.0  V
 ICBO Collector cut-off current VCB=160V IE=0    100  μA
 IEBO Emitter cut-off current VEB=5V; IC=0    100  μA
 hFE DC current gain IC=7A ; VCE=4V 5000   
 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz   95   pF
 fT Transition frequency IC=2A ; VCE=12V   55  MHz
 Switching times
 ton Turn-on time

 IC=7A;RL=10Ω

 IB1=- IB2=7mA

 VCC=70V

   0.5   μs
 ts Storage time  10.0   μs
 tf Fall time   1.1   μs

 

‹ hFE Classifications

          O          P             Y
   5000-12000    6500-20000   15000-30000

 

 

PACKAGE OUTLINE

 

 

 

 

 

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