Home Companies Guangdong Huixin Electronics Technology Co., Ltd.

2 Pin DO-41 T/R 1A 50ns High Frequency Rectifier Diodes

Guangdong Huixin Electronics Technology Co., Ltd.
Active Member

Contact Us

[China] country

Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

Contact name:Marissa Wang

Inquir Now

Guangdong Huixin Electronics Technology Co., Ltd.

2 Pin DO-41 T/R 1A 50ns High Frequency Rectifier Diodes

Country/Region china
City & Province dongguan guangdong
Categories Switching Power Supply
InquireNow

Product Details

 

General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41

 

 

HER101~HER108 DO-41 Datasheet.pdf

 

 

Features: 

 

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed 

 

 

Mechanical Data:

 

 

  • Case : Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0088 ounce, 0.25 grams

 

 

Maximum Ratings And Electrical Characteristics:

 

 

 

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

 

 

 

Parameter

 

SYMBOLS

 

HER101HER102HER103HER104HER105HER106HER107HER108UNITS
Maximum Repetitive Peak Reverse Voltage

 

VRRM

 

501002003004006008001000Volts
Maximum RMS Voltage

 

VRMS

 

3570140210280420560700Volts
Maximum DC Blocking Voltage

 

VDC

 

501002003004006008001000Volts
Maximum Average Forward Rectifier Current at TL=100°C

 

IF(AV)

 

1.0Amps
Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load

 

IFSM

 

35Amps
Maximum Instantaneous Forward Voltage at 1A

 

VF

 

11.41.7Volts
Maximum DC Reverse Current at rated DC blocking voltageTA=25°C

 

IR

 

 

10

 

μA
TA=125°C

 

500

 

Maximum Reverse Recovery Time

 

Trr

 

5075ns

 

 


Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A

         2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

 

 


1. Hot Sellings 

 

 

 

 

 

 

Hot Products

3Amp 1000V S3M SMBF General Purpose Rectifier Diode S3A~S3M SMBF Datasheet.pdf Descriptions: The ...
3Amp 1000V S3M SMBF General Purpose Rectifier Diode S3A~S3M SMBF Datasheet.pdf Descriptions: The ...
1 Amp Silicon Rectifier 50 to 1000 Volts Fast Recovery Rectifiers Rectifier Diode Switching 400V 1A ...
Rectifier Diode Switching 600V 1A 250ns 2-Pin DO-41 RoHS Compliant FR101~FR107 DO-41 Datasheet.pdf ...
General Purpose Fast Recovery Epitaxial Diode 1.0 Ampere 800 Voltage DO-41 HER101~HER108 DO-41 ...
1.0 Amp Fast Recovery Rectifier Diodes 50 to 600 Volts SF16 DO-41 SF11~SF18 DO-41 Datasheet.pdf ...