Active Member
|
[China]
Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
Contact name:Marissa Wang
Guangdong Huixin Electronics Technology Co., Ltd. |
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Silicon Epitaxial Planar Schottky Barrier Diode RB520S-30
These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited.
For low current rectification and high speed switching applications.
RB520S-30 SOD523 Datasheet.pdf
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
|
Symbol
| Value
| Units
|
Reverse Voltage
|
VR
| 30
| V
|
Mean Rectifying Current
| IF(AV)
|
200
| mA
|
Peak Forward Surge Current
| IFSM
|
1
| A
|
Junction Temperature
| TJ
|
125
| ℃
|
Forward Voltage at IF = 200 mA
| VF
|
0.6
| V
|
Note: ESD sensitive product handling required.
