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[China]
Trade Verify
Address: Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai
Contact name:Xiwen Bai (Ciel)
Shanghai GaNova Electronic Information Co., Ltd. |
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Verified Suppliers
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0.015Ω•cm—0.025Ω•cm SiC Epitaxial Wafer C-Face:Optical Polish,Si-Face CMP
Overview
A SiC wafer is a semiconductor material made of silicon. A silicon carbide wafer is a crystalline material that is made by etching the crystal. It is typically thin enough to be used for power semiconductor devices. The other type is a type of insulator.
The temperature range is extremely important for electrical and magnetic fields in power semiconductors. A silicon carbide wafer is conductive in both directions.
| 6 inch diameter Silicon Carbide (SiC) Substrate Specification | ||||
| Grade | Zero MPD Production Grade (Z Grade) | Dummy Grade (D Grad) | ||
| Diameter | 149.5mm~150.0mm | |||
| Thickness | 4H-N | 350μm±20μm | 350μm±25μm | |
| 4H-SI | 500μm±20μm | 500μm±25μm | ||
| Wafer Orientation | Off axis:4.0°toward <1120>±0.5°for 4H-N,On axis:<0001>±0.5°for 4H-SI | |||
| Micropipe Density | 4H-N | ≤0.5cm-² | ≤15cm-² | |
| 4H-SI | ≤1cm-² | ≤15cm-² | ||
| Resistivity | 4H-N | 0.015~0.025Ω·cm | 0.015~0.028Ω·cm | |
| 4H-SI | ≥1E9Ω·cm | ≥1E5Ω·cm | ||
| Primary Flat Orientation | {10-10}±5.0° | |||
| Primary Flat Length | 4H-N | 47.5 mm±2.0 mm | ||
| 4H-SI | Notch | |||
| Edge Exclusion | 3mm | |||
| LTV/TTV/Bow /Warp | ≤3μm/≤6μm/≤30μm/≤40μm | ≤5μm/≤15μm/≤40μm/≤60μm | ||
| Roughness | Silicon face | CMP Ra≤0.2nm | Ra≤0.5nm | |
| Carbon face | Polish Ra≤1.0nm | |||
| Edge Cracks By High Intensity Light | None | Cumulative length ≤ 20 mm, single length≤2 mm | ||
| ※ Hex Plates By High Intensity Light | Cumulative area≤0.05% | Cumulative area≤0.1% | ||
| ※Polytype Areas By High Intensity Light | None | Cumulative area≤3% | ||
| Visual Carbon Inclusions | Cumulative area≤0.05% | Cumulative area≤3% | ||
| Silicon Surface Scratches By High Intensity Light | None | Cumulative length≤1×wafer diameter | ||
| Edge Chips By High Intensity Light | None permitted ≥0.2 mm width and depth | 5 allowed, ≤1 mm each | ||
| Silicon Surface Contamination by High Intensity Light | None | |||
| Packaging | Multi-wafer Cassette or Single Wafer Container | |||
Remark: 3mm edge exclusion is used for the items marked with a.
About Us
We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.
FAQ
Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according
to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the
cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.
