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FP150R07N3E4_B11 IGBT Transistor Module High Power Practical

Yougou Electronics (Shenzhen) Co., Ltd.

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FP150R07N3E4_B11 IGBT Transistor Module High Power Practical

Country/Region china
City & Province shenzhen
Categories Solar Chargers
InquireNow

Product Details

High-Power IGBT Module

Boost Your Electronics Project with the FP150R07N3E4_B11

 

The FP150R07N3E4_B11 is a high-power IGBT module that is perfect for boosting your electronics project. With a powerful output of 150A and 650V, this IGBT module can handle high-power applications with ease. Here are some of the pros and cons of the FP150R07N3E4_B11:

 

Pros:

- High power output makes it ideal for demanding applications

- High switching frequency allows for fast and efficient operation

- Built-in temperature sensor helps prevent overheating

- Robust design ensures reliable operation even in harsh environments

 

Cons:

- Higher cost compared to smaller IGBT modules

- Bulky size may not be ideal for compact projects Despite its higher cost and bulky size, the FP150R07N3E4_B11 offers unbeatable performance for high-power applications. Its robust design and built-in temperature sensor make it a reliable choice for electronics projects.

 

Whether you're a DIY enthusiast or a professional electronics engineer, the FP150R07N3E4_B11 is an excellent choice for boosting your next project.

 

Specifications:

  • Product Category:IGBT Modules
  • RoHS: Details
  • Product:IGBT Silicon Modules
  • Configuration:3-Phase Inverter
  • Collector- Emitter Voltage VCEO Max:650 V
  • Collector-Emitter Saturation Voltage:1.55 V
  • Continuous Collector Current at 25 C:150 A
  • Gate-Emitter Leakage Current: 400 nA
  • Pd - Power Dissipation:430 W
  • Minimum Operating Temperature:- 40 C
  • Maximum Operating Temperature:+ 150 C
  • Packaging:Tray
  • Brand:Infineon Technologies
  • Product Type:IGBT Modules
  • Series: Trench/Fieldstop IGBT4 - E4
  • Subcategory:IGBTs
  • Tradename:EconoPIM PressFIT
  • Unit Weight:300 g

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