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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W

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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W

Country/Region	china
City & Province	shenzhen guangdong
Categories	Switches

Product Details

NEW AND ORIGNAL IRLML6401 N-Channel MOSFET SOT23-3 IRLML6401TRPBF

Products Description:

MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V

Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R

Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W

These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized devicedesign that HEXFET® power MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable device for use in battery andload management.A thermally enhanced large pad leadframe has been incorporated into thestandard SOT-23 package to produce a HEXFET Power MOSFET with theindustry's smallest footprint. This package, dubbed the Micro3™, is ideal forapplications where printed circuit board space is at a premium. The low profile(<1.1mm) of the Micro3 allows it to fit easily into extremely thin applicationenvironments such as portable electronics and PCMCIA cards. The thermalresistance and power dissipation are the best available

Technological Parameters:

Threshold voltage	550 mV
input capacitance	830 pF
Rated power	1.3 W
polarity	P-Channel
Installation method	Surface Mount
pin number	3
package	SOT-23-3
Operating temperature	-55℃ ~ 150℃ (TJ)
Packaging	Tape & Reel (TR)
Manufacturing applications	DC Switches