|
[China]
Trade Verify
Address: 27P , Block B , Duhui 100 , Zhonghang Road , Futian District , Shenzhen , China
Contact name:Biona
Hontai Machinery and equipment (HK) Co. ltd |
|
Verified Suppliers
|
|
|
Infineon Technologies Automotive IGBT Modules High power converters FF1200R12IE5 Motor drives
Typical Applications
• High power converters
• Motor drives
• UPS systems
Electrical Features
• Extended operating temperature Tvj op
• High short-circuit capability
• Unbeatable robustness
• Tvj op = 175°C
• Trench IGBT 5
Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances
IGBT Inverter
Maximum Rated Values
| Collector-emitter voltage | Tvj = 25°C | VCES | 1200 | V |
| Continuous DC collector current | TC = 80°C, Tvj max = 175°C | IC nom | 1200 | A |
| Repetitive peak collector current | tP = 1 ms | ICRM | 2400 | A |
| Gate-emitter peak voltage | VGES | +/-20 | V |
Characteristic Values min. typ. max.
| Collector-emitter saturation voltage | IC = 1200 A, VGE = 15 V Tvj = 25°C IC = 1200 A, VGE = 15 V Tvj = 125°C IC = 1200 A, VGE = 15 V Tvj = 175°C | VCE sat | 1,70 2,00 2,15 | 2,15 2,45 2,60 | VVV | |
| Gate threshold voltage | IC = 33,0 mA, VCE = VGE, Tvj = 25°C | VGEth | 5,25 | 5,80 | 6,35 | V |
| Gate charge | VGE = -15 V ... +15 V, VCE = 600V | QG | 5,75 | µC | ||
| Internal gate resistor | Tvj = 25°C | RGint | 0,75 | Ω | ||
| Input capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cies | 65,5 | nF | ||
| Reverse transfer capacitance | f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V | Cres | 2,60 | nF | ||
| Collector-emitter cut-off current | VCE = 1200 V, VGE = 0 V, Tvj = 25°C | ICES | 5,0 | mA | ||
| Gate-emitter leakage current | VCE = 0 V, VGE = 20 V, Tvj = 25°C | IGES | 400 | nA | ||
| Turn-on delay time, inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C | td on | 0,20 0,23 0,25 | µs µs µs | ||
| Rise time,inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C | tr | 0,16 0,17 0,18 | µs µs µs | ||
| Turn-off delay time, inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C | td off | 0,48 0,52 0,55 | µs µs µs | ||
| Fall time,inductive load | IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C | tf | 0,08 0,11 0,13 | µs µs µs | ||
| Turn-on energy loss per pulse | IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 175°C) Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C | Eon | 80,0 120 160 | mJ mJ mJ | ||
| Turn-off energy loss per pulse | IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 175°C) Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C | Eoff | 130 160 180 | mJ mJ mJ | ||
| SC data | VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C | ISC | 4000 | A | ||
| Thermal resistance, junction to case | IGBT/per IGBT | RthJC | 28,7 | K/kW | ||
| Thermal resistance,case to heat sink | IGBT/per IGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) | RthCH | 22,1 | K/kW | ||
| Temperature under switching conditions | Tvj op | -40 | 175 | °C |
