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Orientation 100 Single LaAlO3 Wafer Substrate For Microwave

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.

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Orientation 100 Single LaAlO3 Wafer Substrate For Microwave

Country/Region china
Categories Bromide
InquireNow

Product Details

Orientation <100> Single LaAlO3 Crystal Wafer

 

LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.

 

Applications:

 

Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials

 

Main Properties:

 

Major Parameters
Crystal structureM6(normal temperature)M3(>435℃)
Unit cell constantM6 a=5.357A c=13.22 AM3 a=3.821 A
Melt point()2080
Density6.52(g/cm3)
Hardness6-6.5(mohs)
Thermal expansion9.4x10-6/℃
Dielectric constantsε=21
Secant loss(10ghz)~3×10-4@300k,~0.6×10-4@77k
Color and appearanceTo anneal and conditions differ from brown to brownish
Chemical stabilityInsoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C
CharacteristicsFor microwave electron device
Growth methodCzochralski method
SizeSize upon request, the biggest diameter 3 inches
Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3
Thickness0.5mm,1.0mm
PolishingSingle or double
Crystal Orientation<100> <110> <111>
redirection precision±0.5°
Redirection the edge:2°(special in 1°)
Angle of crystallineSpecial size and orientation are available upon request
Ra:≤5Å(5µm×5µm)
Pack

Class 100 clean bag,class 1000 clean bag

 

 

Our Company:

 

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

 

Main Advantages:

 

Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability.

 

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