Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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SR220 – SR2100
2.0A SCHOTTKY BARRIER DIODE
Features
• Schottky Barrier Chip
• Guard Ring Die Construction for Transient Protection
• High Current Capability
• Low Power Loss, High Efficiency
• High Surge Current Capability
• For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications
Mechanical Data
• Case: DO-15, Molded Plastic
• Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
• Polarity: Cathode Band
• Weight: 0.40 grams (approx.)
• Mounting Position: Any ! Marking: Type Number
• Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
| Characteristic | Symbol | SR220 | SR230 | SR240 | SR250 | SR260 | SR280 | SR2100 | Unit |
|---|---|---|---|---|---|---|---|---|---|
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage | VRRM VRWM VR | 20 | 30 | 40 | 50 | 60 | 80 | 100 | V |
| RMS Reverse Voltage | VR(RMS) | 14 | 21 | 28 | 35 | 42 | 56 | 70 | V |
| Average Rectified Output Current @TL = 100°C (Note 1) | IO | 2.0 | A | ||||||
| Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 50 | A | ||||||
| Forward Voltage @IF = 2.0A | VFM | 0.50 | 0.70 | 0.85 | V | ||||
Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C | IRM | 0.5 10 | mA | ||||||
| Typical Junction Capacitance (Note 2) | Cj | 170 | 140 | pF | |||||
| Typical Thermal Resistance (Note 1) | RθJA | 35 | °C/W | ||||||
| Operating and Storage Temperature Range | Tj, TSTG | -65 to +150 | °C | ||||||
Note:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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