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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Anterwell Technology Ltd.
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Anterwell Technology Ltd.

IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

PDP SWITCH IRFB4229PbF

Features

• Advanced Process Technology

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,

  Energy Recovery and Pass Switch Applications

• Low QG for Fast Response

• High Repetitive Peak Current Capability for Reliable Operation

• Short Fall & Rise Times for Fast Switching

• 175°C Operating Junction Temperature for Improved Ruggedness

• Repetitive Avalanche Capability for Robustness and Reliability

 

Key Parameters

VDS min250V
VDS (Avalanche) typ.300V
RDS(ON) typ. @ 10V38
IRP max @ TC= 100°C91A
TJ max175°C

 

 

Description

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

 

Absolute Maximum Ratings

 ParameterMax.Units
VGSGate-to-Source Voltage±30V
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V46A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V33A
IDMPulsed Drain Current180A
IRP @ TC = 100°CRepetitive Peak Current91A
PD @TC = 25°CPower Dissipation330W
PD @TC = 100°CPower Dissipation190W
 Linear Derating Factor2.2W/°C
TJ  TSTGOperating Junction and Storage Temperature Range-40 to + 175°C
 Soldering Temperature for 10 seconds300°C
 Mounting Torque, 6-32 or M3 Screw10lbin (1.1Nm)N

 

 

 

 

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