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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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Anterwell Technology Ltd.

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Country/Region china
City & Province shenzhen guangdong
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Product Details


TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

 

 

 

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 23 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

 

 

 

 

 

 

 

 

 

 

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution

 

 

 

 

Maximum Ratings (Ta = 25°C)

Characteristics SymbolRating Unit
Drain-source voltage VDSS −30V
Drain-gate voltage (RGS = 20 kΩ) VDGR −30V
Gate-source voltage VGSS ±20 V
Drain power dissipation (t = 10 s)PD 1.9 W
Drain power dissipation (t = 10 s)PD 1.0  W
Single pulse avalanche energyEAS 31.5 mJ
Avalanche current IAR −11A
Repetitive avalanche energyEAR0.19mJ
Channel temperature Tch 150°C

 

 

 

 

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