Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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AO4620 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications).
Features
n-channel p-channel
VDS (V) = 30V -30V
ID = 7.2A (VGS=10V) -5.3A (VGS = -10V)
RDS(ON) RDS(ON)
< 24mΩ (VGS=10V) < 38mΩ (VGS = -10V)
< 36mΩ (VGS=4.5V) < 60mΩ (VGS = -4.5V)
Absolute Maximum Ratings TA=25°C unless otherwise noted
| Parameter | Symbol | Max n-channel | Max p-channel | Units | |
|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | -30 | V | |
| Gate-Source Voltage | VGS | ±20 | ±20 | V | |
| Continuous Drain Current F | TA=25°C | ID | 7.2 | -5.3 | A |
| TA=70°C | 6.2 | -4.5 | A | ||
| Pulsed Drain Current B | IDM | 30 | -30 | A | |
| Power Dissipation F | TA=25°C | PD | 2 | 2 | W |
| TA=70°C | 1.44 | 1.44 | W | ||
| Avalanche Current B | IAR | 13 | 17 | A | |
| Repetitive avalanche energy 0.3mH B | EAR | 25 | 43 | mJ | |
| Junction and Storage Temperature Range | TJ, TSTG | -55 to 150 | -55 to 150 | °C | |
B: Repetitive rating, pulse width limited by junction temperature.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
Stock Offer (Hot Sell)
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