Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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AP4506GEH
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Good Thermal Performance
▼ Fast Switching Performance
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units | |
| N-channel | P-channel | |||
| VDS | Drain-Source Voltage | 30 | -30 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID@TA=25℃ | Continuous Drain Current3 | 9 | -8 | A |
| ID@TA=70℃ | Continuous Drain Current3 | 7.2 | -6.4 | A |
| IDM | Pulsed Drain Current1 | 50 | -50 | A |
| PD@TA=25℃ | Total Power Dissipation | 3.1 | W | |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ | |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ | |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
Stock Offer (Hot Sell)
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