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2N5486 Power Mosfet Transistor N-Channel RF Amplifier N-CHANNEL JFETS

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2N5484 MMBF5484

2N5485 MMBF5485

2N5486 MMBF5486

N-Channel RF Amplifier

This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

Absolute Maximum Ratings* T_A = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
V_DG	Drain-Gate Voltage	25	V
V_GS	Gate-Source Voltage	-25	V
I_GF	Forward Gate Current	10	mA
T_J ,T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

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