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TC4423COE/TC4423CPA Circuit Board Chips Integrated Circuit Chip Program Memory

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Anterwell Technology Ltd.

TC4423COE/TC4423CPA Circuit Board Chips Integrated Circuit Chip Program Memory

Country/Region china
City & Province shenzhen guangdong
Categories Chargers
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Product Details

3A Dual High-Speed Power MOSFET Drivers

 

Features

 

• High Peak Output Current: 3A

• Wide Input Supply Voltage Operating Range: - 4.5V to 18V

• High Capacitive Load Drive Capability: - 1800 pF in 25 ns

• Short Delay Times: <40 ns (typ)

• Matched Rise/Fall Times

• Low Supply Current: - With Logic ‘1’ Input

– 3.5 mA (Max) - With Logic ‘0’ Input

– 350 µA (Max) • Low Output Impedance: 3.5Ω (typ)

• Latch-Up Protected: Will Withstand 1.5A Reverse Current

• Logic Input Will Withstand Negative Swing Up To 5V

• ESD Protected: 4 kV

• Pin compatible with the TC1426/TC1427/TC1428, TC4426/TC4427/TC4428 and TC4426A/ TC4427A/TC4428A devices.

• Space-saving 8-Pin 6x5 DFN Package

 

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive • Line Drivers

 

General Description

 

The TC4423/TC4424/TC4425 devices are a family of 3A, dual-output buffers/MOSFET drivers. Pin compatible with the TC1426/27/28, TC4426/27/28 and TC4426A/27A/28A dual 1.5A driver families, the TC4423/24/25 family has an increased latch-up current rating of 1.5A, making them even more robust for operation in harsh electrical environments. As MOSFET drivers, the TC4423/TC4424/TC4425 can easily charge 1800 pF gate capacitance in under 35 nsec, providing low enough impedances in both the on and off states to ensure the MOSFET's intended state will not be affected, even by large transients. The TC4423/TC4424/TC4425 inputs may be driven directly from either TTL or CMOS (2.4V to 18V). In addition, the 300 mV of built-in hysteresis provides noise immunity and allows the device to be driven from slowly rising or falling waveforms.

 

ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B ................................................(VDD + 0.3V) to (GND – 5V)
Package Power Dissipation (TA ≤ 70°C)
DFN ......................................................................... Note 2
PDIP .......................................................................730 mW SOIC.......................................................................470 mW

 
PART OF STOCK

TRANS. FDS9435A1500FSC15+SOP-8
DIODO MMBD4148,215300000NXP15+SOT23-3
C.I L7805CD2T-TR2500ST14+D2PAK
FDS6990A1500FSC15+SOP-8
NDS9952A1500FSC15+SOP-8
SN65HVD485EDR1500TI16+SOP-8
SMBJ8.5CA7500VISHAY16+SMB
PIC24FJ16GA004-I/PT1500MICROCHIP13+TQFP-44
C.I TLC072CDGNR5000TI05+MSOP-8
C.I SN74LS374N2000TI15+DIP-20
TRANS. BC817-16LT1G300000ON12+SOT-23
C.I TL074CN1000TI12+DIP-14
OPTOACOPLADOR MOC3063SM20000FSC14+SOP-6
TRIAC BT151-500R300000NXP16+TO-220
C.I MM74HC164MX25000FSC05+SOP-14
C.I WS79L05100000WS16+TO-92
RES RL1206FR-070R75L100000YAGEO16+SMD1206
RES RC1206FR-071R5L500000YAGEO16+SMD1206
RES RC1206FR-071R2L500000YAGEO16+SMD1206
RES RL1206FR-070R68L1000000YAGEO16+SMD1206
RES RC0402FR-0722KL3000000YAGEO16+SMD0402
RES RC0402FR-0756RL2000000YAGEO16+SMD0402
RES RC0402FR-0724RL2000000YAGEO16+SMD0402
RES RC1206JR-072ML500000YAGEO16+SMD1206
CAP 1206 22PF 1KV NP0 CL31C220JIFNFNE600000SAMSUNG16+SMD1206

 
 

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