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RJH60F7ADPK Power Mosfet Transistor Silicon N Channel IGBT Transistor

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

RJH60F7ADPK

Silicon N Channel IGBT High Speed Power Switching

Features

Low collector to emitter saturation voltage V_CE(sat) = 1.35 V typ. (at I_C = 50 A, V_GE = 15V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching t_f = 95 ns typ. (at I_C = 30 A, Resistive Load, V_CC = 300 V, V_GE = 15 V, Rg = 5 Ω, Ta = 25°C)

Absolute Maximum Ratings (Tc = 25°C)

Item		Symbol	Ratings	Unit
Collector to emitter voltage		V_CES	600	V
Gate to emitter voltage		V_GES	±30	V
Collector current	Tc = 25°C	I_C	90	A
Collector current	Tc = 100°C	I_C	50	A
Collector peak current		ic(peak) ^Note1	180	A
Collector to emitter diode forward peak current		DF(peak) ^Note2	100	A
Collector dissipation		P_C	328.9	W
Junction to case thermal impedance (IGBT)		θj-c	0.38	°C/W
Junction to case thermal impedance (Diode)		θj-c	2.0	°C/W
Junction temperature		Tj	150	°C
Storage temperature		Tstg	–55 to +150	°C

Notes: 1. Pulse width limited by safe operating area.

2. PW ≤ 5 μs, duty cycle ≤ 1%

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