Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Si2323CDS P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Load Switch
• PA Switch
• DC/DC Converters
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| Drain-Source Voltage | VDS | -20 | V |
| Gate-Source Voltage | VGS | ± 8 | V |
Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C | ID | -6e -5.2 -4.6b, c -3.7b, c | A |
| Pulsed Drain Current | IDM | -20 | A |
Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C | IS | -2.1 -1b, c | A |
Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C | PD | 2.5 1.6 1.25b, c 0.8b, c | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
SOT-23 (TO-236): 3-LEAD
Stock Offer (Hot Sell)
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