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| Part No. | Quantity | Brand | D/C | Package |
| MCIMX535DVV1C | 1066 | FREESCALE | 14+ | BGA |
| MCIMX6S7CVM08AC | 769 | FREESCALE | 16+ | BGA |
| MCP100T-270I/TT | 68000 | MICROCHIP | 15+ | SOT23-3 |
| MCP100T-315I/TT | 57000 | MICROCHIP | 16+ | SOT23-5 |
| MCP100T-450I/TT | 58000 | MICROCHIP | 10+ | SOT23-3 |
| MCP120T-315I/TT | 24000 | MICROCHIP | 14+ | SOT-23 |
| MCP1252-33X50I/MS | 6935 | MICROCHIP | 16+ | MSOP |
| MCP1525T-I/TT | 22350 | MICROCHIP | 14+ | SOT23-3 |
| MCP1700T-1802E/MB | 11219 | MICROCHIP | 16+ | SOT-89 |
| MCP1700T-1802E/TT | 17041 | MICROCHIP | 06+ | SOT23-3 |
| MCP1700T-3302E/MB | 14911 | MICROCHIP | 09+ | SOT-89 |
| MCP1700T-3302E/TT | 87000 | MICROCHIP | 12+ | SOT-23 |
| MCP1700T-5002E/TT | 6249 | MICROCHIP | 16+ | SOT-23 |
| MCP1702T-3302E/MB | 8308 | MICROCHIP | 13+ | SOT-89 |
| MCP1703T-5002E/DB | 6320 | MICROCHIP | 13+ | SOT-223 |
| MCP1825ST-3302E/DB | 5514 | MICROCHIP | 16+ | SOT-223 |
| MCP1826T-3302E/DC | 6845 | MICROCHIP | 15+ | SOT223-5 |
| MCP2122-E/SN | 7708 | MICROCHIP | 13+ | SOP-8 |
| MCP23S17-E/SO | 8974 | MICROCHIP | 15+ | SOP-28 |
| MCP2551-I/SN | 7779 | MICROCHIP | 16+ | SOP-8 |
| MCP2551T-E/SN | 3957 | MICROCHIP | 16+ | SOP-8 |
| MCP3202-CI/SN | 5841 | MICROCHIP | 15+ | SOP-8 |
| MCP3202-CI/SN | 5770 | MICROCHIP | 15+ | SOP-8 |
| MCP3208-CI/P | 8740 | MICROCHIP | 15+ | DIP |
| MCP3421AOT-E/CH | 12828 | MICROCHIP | 16+ | SOT23-6 |
| MCP3422AO-E/SN | 3875 | MICROCHIP | 10+ | SOP-8 |
| MCP3424-E/SL | 8273 | MICROCHIP | 16+ | SOP-14 |
| MCP3551-E/SN | 7817 | MICROCHIP | 16+ | SOP-8 |
| MCP41050T-I/SN | 4450 | MICROCHIP | 11+ | SOP-8 |
| MCP41100-I/SN | 3572 | MICROCHIP | 15+ | SOP-8 |
FQP30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
• 30A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 19 nC)
• Low Crss ( typical 40 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings TC = 25°C unless otherwise noted
| Symbol | Parameter | FQP30N06 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) | 30 | A |
| 21.3 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 120 | A |
| VGSS | Gate-Source Voltage | ± 25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 280 | mJ |
| IAR | Avalanche Current (Note 1) | 30 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 7.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TC = 25°C) - Derate above 25°C | 79 | W |
| 0.53 | W/°C | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +175 | °C |
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | 300 | °C |
