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FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET high power mosfet transistors rf power mosfet transistors

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Anterwell Technology Ltd.

FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET high power mosfet transistors rf power mosfet transistors

Country/Region china
City & Province shenzhen guangdong
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Product Details


Single P-Channel 2.5V Specified PowerTrenchTM MOSFET


General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

 

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

 

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design.

 

 

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

 

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