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LF357N Integrated Circuit Electronics Components amplifier ic chip in electronics

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Anterwell Technology Ltd.

LF357N Integrated Circuit Electronics Components amplifier ic chip in electronics

Country/Region	china
City & Province	shenzhen guangdong
Categories	Ballasts

Product Details

LF357N Integrated Circuit Electronics Components amplifier ic chip in electronics

Part no.

Quantity

Brand

D/C

Package

ZXMC3A16DN8TC	6800	ZETEX	14+	SOP8
LP2980IM5X-3.3	6802	NS	14+	SOT23-5
AO3406	6820	AOS	14+	SOT-23
APM4546KC-TRL	6850	ANPEC	16+	SOP-8
IRFU5505	6866	IR	16+	TO-251
MUR1640CTG	6880	ON	13+	TO-220
TOP247YN	6882	POWER	15+	TO-220
PIC16LF876A-I/SS	6885	MICROCHIP	16+	SSOP
UC3842BD	6888	ST	16+	SOP8
UCC2804D	6900	TI	14+	SOP8
LM385M3X-1.2	6999	NS	14+	SOT-23
BT136-600D	7000	PHILIPS	14+	TO-220
BYW29E-200	7000	NXP	16+	TO-220
FDC6323L	7000	FAIRCHILD	16+	SOT163
FT232BL	7000	FTDI	13+	LQFP-32
IRFP4568PBF	7000	IR	15+	TO-247
IRLML2502TR	7000	IR	16+	SOT23
LL4148	7000	VISHAY	16+	LL-34
LNK305PN	7000	POWER	14+	DIP7
MAX489ESD	7000	MAXIM	14+	SOP-14
MCP4922-E/SL	7000	MICROCHIP	14+	SOP
MJD32CT	7000	ON	16+	SOT252
MM74HC595M	7000	FAIRCHILD	16+	SOP-16
P3055LDG	7000	NIKO	13+	TO-252
PIC24FJ64GA006-I/PT	7000	MICROCHIP	15+	TQFP
SN74HC595DWR	7000	TI	16+	SOIC16
STN790A	7000	ST	16+	SOT223
TD62083AFG	7000	TOSHIBA	14+	SOP18
TLP126	7000	TOSHIBA	14+	SOP
TOP221PN	7000	POWER	14+	DIP8

LF155/LF156/LF256/LF257/LF355/LF356/LF357

JFET Input Operational Amplifiers

General Description

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection.

The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

Features

Advantages

Replace expensive hybrid and module FET op amps
Rugged JFETs allow blow-out free handling compared with MOSFET input devices
Excellent for low noise applications using either high or low source impedance — very low 1/f corner
Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers
New output stage allows use of large capacitive loads (5,000 pF) without stability problems
Internal compensation and large differential input voltage capability

Applications

Precision high speed integrators
Fast D/A and A/D converters
High impedance buffers
Wideband, low noise, low drift amplifiers
Logarithmic amplifiers
Photocell amplifiers
Sample and Hold circuits

Common Features

Low input bias current: 30pA
Low Input Offset Current: 3pA
High input impedance: 1012Ω
Low input noise current: 0.01pA/√Hz
High common-mode rejection ratio: 100 dB
Large dc voltage gain: 106 dB

Uncommon Features

	LF155/ LF355	LF156/ LF256/ LF356	LF257/ LF357 (A_V=5)	Units
Extremely fast settling time to 0.01%	4	1.5	1.5	µs
Fast slew rate	5	12	50	V/µs
Wide gain bandwidth	2.5	5	20	MHz
Low input noise voltage	20	12	12	nV/√Hz

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for availability and specifications.

	LF155/6	LF256/7/LF356B	LF355/6/7
Supply Voltage	±22V	±22V	±18V
Differential Input Voltage	±40V	±40V	±30V
Input Voltage Range (Note 2)	±20V	±20V	±16V
Output Short Circuit Duration	Continuous	Continuous	Continuous
T_JMAX H-Package N-Package M-Package	150˚C	115˚C 100˚C 100˚C	115˚C 100˚C 100˚C
Power Dissipation at T_A = 25˚C (Notes 1, 8) H-Package (Still Air) H-Package (400 LF/Min Air Flow) N-Package M-Package	560 mW 1200 mW	400 mW 1000 mW 670 mW 380 mW	400 mW 1000 mW 670 mW 380 mW
Thermal Resistance (Typical) θ_JA H-Package (Still Air) H-Package (400 LF/Min Air Flow) N-Package M-Package	160˚C/W 65 ˚C/W	160˚C/W 65 ˚C/W 130 ˚C/W 195 ˚C/W	160˚C/W 65 ˚C/W 130 ˚C/W 195 ˚C/W
Thermal Resistance (Typical) θ_JC H-Package	23˚C/W	23˚C/W	23˚C/W
Storage Temperature Range	−65˚C to +150˚C	−65˚C to +150˚C	−65˚C to +150˚C
Soldering Information (Lead Temp.) Metal Can Package Soldering (10 sec.) Dual-In-Line Package Soldering (10 sec.) Small Outline Package Vapor Phase (60 sec.) Infrared (15 sec.)	300˚C 260˚C	300˚C 260˚C 215˚C 220˚C	300˚C 260˚C 215˚C 220˚C
ESD tolerance (100 pF discharged through 1.5kΩ)	1000V	1000V	1000V

Note 1: The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature, TA. The maximum available power dissipation at any temperature is PD=(TJMAX−TA)/θJA or the 25˚C PdMAX, whichever is less.

Note 2: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.

Simplified Schematic