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IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

Anterwell Technology Ltd.
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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

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Anterwell Technology Ltd.

IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET

IRFB31N20DPBF smd power mosfet dual power mosfet Power Mosfet Transistor HEXFET® Power MOSFET
Country/Region china
City & Province shenzhen guangdong
InquireNow

Product Details

 

HEXFET Power MOSFET

 

VDSSRDS(on) maxID
200V0.082Ω31A

 

Applications

  • High Frequency DC-DC converters
  • Lead-Free

Benefits

  • Low Gate to Drain to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001)
  • Fully Characterized Avalanche Voltage and Current

 

Absolute Maximum Ratings

 ParameterMax.Unit
ID @ TC = 25°CContinuous Drain Current, VGS @ 10V31‡A
ID @ TC = 100°CContinuous Drain Current, VGS @ 10V21A
IDMPulsed Drain Current 124A
PD @TA = 25°CPower Dissipation3.1W
PD @TC = 25°CPower Dissipation200W
 Linear Derating Factor1.3W/°C
VGSGate-to-Source Voltage± 30V
dv/dtPeak Diode Recovery dv/dt ƒ2.1V/ns

TJ

TSTG

Operating Junction and

Storage Temperature Range

-55 to + 175°C
 Soldering Temperature, for 10 seconds300 (1.6mm from case )°C
 Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m) 

 

 

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ZTX65129000ZETEX11+TO-92
LTC1650AIS2802LINEAR11+SOP

 

 

 

 

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