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RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)

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Anterwell Technology Ltd.

RDN100N20 Off Line Switcher IC electrical ic Power Mosfet Transistor Switching (200V, 10A)

Country/Region china
City & Province shenzhen guangdong
Categories Other Switches
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Product Details

 

Switching (200V, 10A)

RDN100N20

 

Features

1) Low on-resistance.

2) Low input capacitance.

3) Exellent resistance to damage from static electricity.

 

Application

Switching

 

Structure

Silicon N-channel

MOS FET

 

Absolute maximum ratings (Ta=25°C)

ParameterSymbolLimitsUnit
Drain-Source VoltageVDSS200V
Gate-Source VoltageVGSS±30V
Drain CurrentContinuousID10A
PulsedIDP  *140A
Reverse Drain CurrentContinuousIDR10A
PulsedIDRP *140A
Avalanche CurrentIAS *210A
Avalanche EnergyEAS *2120mJ
Total Power Dissipation (TC=25°C)PD35W
Channel TemperatureTch150°C
Storage TemperatureTstg−55 to +150°C

∗1 Pw ≤ 10µs, Duty cycle ≤ 1%

∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C

 

External dimensions (Unit : mm)                           

 

Equivalent circuit

∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

 

 

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