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APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

Anterwell Technology Ltd.

APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET

Country/Region	china
City & Province	shenzhen guangdong
Categories	Solar Chargers

Product Details

N-Channel Enhancement Mode MOSFET

Features
· 25V/50A ,
R_DS(ON) =7.5mW(typ.) @ V_GS =10V
R_DS(ON) =13mW(typ.) @ V_GS =4.5V
· Super High Dense Cell Design
· Avalanche Rated
· Reliable and Rugged
· Lead Free Available (RoHS Compliant)

Applications
· Power Management in Desktop Computer or DC/DC Converters

Absolute Maximum Ratings

Symbol	Parameter		Rating	Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS	Drain-Source Voltage		25	V
V_GSS	Gate-Source Voltage		±20	V
T_J	Maximum Junction Temperature		150	°C
T_STG	Storage Temperature Range		-55 to 150	°C
I_S	Diode Continuous Forward Current	TC=25°C	30	A
Mounted on Large Heat Sink
I_DP	300µs Pulse Drain Current Tested	TC=25°C	100	A
I_DP	300µs Pulse Drain Current Tested	TC=100°C	65	A
I_D	Continuous Drain Current	TC=25°C	50*	A
I_D	Continuous Drain Current	TC=100°C	38	A
P_D	Maximum Power Dissipation	TC=25°C	50	W
P_D	Maximum Power Dissipation	TC=100°C	20	W
R_θJC	Thermal Resistance-Junction to Case		2.5	°C/W
Mounted on PCB of 1in² Pad Area
I_DP	300µs Pulse Drain Current Tested	TA=25°C	100	A
I_DP	300µs Pulse Drain Current Tested	TA=100°C	65	A
I_D	Continuous Drain Current	TA=25°C	13	A
I_D	Continuous Drain Current	TA=100°C	8	A
P_D	Maximum Power Dissipation	TA=25°C	2.5	W
P_D	Maximum Power Dissipation	TA=100°C	1	W
R_θJA	Thermal Resistance-Junction to Ambient		50	°C/W
Mounted on PCB of Minimum Footprint
I_DP	300µs Pulse Drain Current Tested	TA=25°C	100	A
I_DP	300µs Pulse Drain Current Tested	TA=100°C	65	A
I_D	Continuous Drain Current	TA=25°C	10.5	A
I_D	Continuous Drain Current	TA=100°C	6	A
P_D	Maximum Power Dissipation	TA=25°C	1.6	W
P_D	Maximum Power Dissipation	TA=100°C	0.6	W
R_θJA	Thermal Resistance-Junction to Ambient		75	°C/W

Note: * Current limited by bond wire.

Pin Description

Avalanche Test Circuit and Waveforms

Switching Time Test Circuit and Waveforms

Packaging Information
TO-252( Reference JEDEC Registration TO-252)

Stock Offer (Hot Sell)

Part NO.

Q'ty

MFG

D/C

Package

OPA354AIDBVR	7480	TI	16+	SOT23-5
MMSZ5V6T1	20000	ON	16+	SOD-123
LPC1764FBD100	2302	NXP	15+	LQFP-100
L9104PD	2465	ST	14+	SOP-20
LPC1766FBD100	1743	NXP	15+	LQFP-100
M48Z58Y-70PC1E1	3503	ST	15+	DIP
MDD2601RH	5896	MAGNACHIP	16+	TO-252
LM4040D20IDBZR	10000	TI	15+	SOT-23
MMA7660FCR1	4391	FREESCALE	13+	QFN
NCP1117DT50RKG	9920	ON	16+	TO-252
LAT-6+	3312	MINI	15+	SOT143
NCP1117DT12G	10000	ON	16+	DPAK
M93C46-WMN6TP	38000	ST	10+	SOP
L6208PD	1090	ST	14+	HSOP36
LM3480IM5X-5.0	4360	TI	15+	SOT-23-5
PIC16F913-I/SS	4743	MICROCHIP	13+	SSOP
NCP5501DT50RKG	13360	ON	14+	TO-252
XC6SLX16-3CSG324I	203	XILINX	13+	BGA
PIC16F916-I/SS	4733	MICROCHIP	14+	SSOP
MAX1811ESA+T	7100	MAXIM	15+	SOP
MIC2025-2YM	6352	MICREL	14+	SOP

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Contact Us

Anterwell Technology Ltd.

APM2509N high power mosfet transistors Power Mosfet Transistor N-Channel Enhancement Mode MOSFET

Product Details

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