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Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

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Anterwell Technology Ltd.

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications 2SK2611

Country/Region	china
City & Province	shenzhen guangdong
Categories	Inverters & Converters

Product Details

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (π−MOSIII) 2SK2611

DC−DC Converter, Relay Drive and Motor Drive Applications

* Low drain−source ON resistance : R_{DS (ON)} = 1.1 Ω (typ.)

* High forward transfer admittance : |Y_fs| = 7.0 S (typ.)

* Low leakage current : I_DSS = 100 μA (max) (V_DS = 720 V)

* Enhancement−mode : Vth = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)

Weight: 4.6 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics		Symbol	Rating	Unit
Drain−source voltage		V_DSS	900	V
Drain−gate voltage (R_GS = 20 kΩ)		V_DGR	900	V
Gate−source voltage		V_GSS	±30	V
Drain current	DC (Note 1)	I_D	9	A
Drain current	Pulse (Note 1)	I_DP	27	A
Drain power dissipation (Tc = 25°C)		P_D	150	W
Single pulse avalanche energy (Note 2)		E_AS	663	mJ
Avalanche current		I_AR	9	A
Repetitive avalanche energy (Note 3)		E_AR	15	mJ
Channel temperature		T_ch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics	Symbol	Max	Unit
Thermal resistance, channel to case	R_{th (ch−c)}	0.833	°C / W
Thermal resistance, channel to ambient	R_{th (ch−a)}	50	°C / W

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 15 mH, RG = 25 Ω, I_AR = 9 A

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device.

Please handle with caution.

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