Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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NPN Plastic Encapsulated Transistor
2SC2274
FEATURES
* High Breakdown Voltage
* High Current
* Low Saturation Voltage
| Product-Rank | 2SC2274-D | 2SC2274-E | 2SC2274-F |
| Range | 60~120 | 100~200 | 160~320 |
| Parameter | Symbol | Rating | Unit |
| Collector to Base Voltage | VCBO | 60 | V |
| Collector to Emitter Voltage | VCEO | 50 | V |
| Emitter to Base Voltage | VEBO | 5 | V |
| Collector Current - Continuous | IC | 0.5 | A |
| Collector Power Dissipation | PC | 600 | mW |
| Thermal Resistance From Junction To Ambient | RθJA | 208 | °C / W |
| Junction, Storage Temperature | TJ, TSTG | 150, -55~150 | °C |
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
| Collector to Base Breakdown Voltage | V(BR)CBO | 60 | -- | -- | V | IC=0.01mA, IE=0 |
| Collector to Emitter Breakdown Voltage | V(BR)CEO | 50 | -- | -- | V | IC=1mA, IB=0 |
| Emitter to Base Breakdown Voltage | V(BR)EBO | 5 | -- | -- | V | IE=0.01mA, IC=0 |
| Collector Cut – Off Current | ICBO | -- | -- | 1 | μA | VCB=40V, IE=0 |
| Emitter Cut – Off Current | IEBO | -- | -- | 1 | μA | VEB=4V, IC=0 |
| DC Current Gain | hFE(1) hFE(2) | 60 35 | -- -- | 320 -- | VCE=5V, IC=50mA VCE=5V, IC=400mA | |
| Collector to Emitter Saturation Voltage | VCE(sat) | -- | -- | 0.6 | V | IC=400mA, IB=40mA |
| Base to Emitter voltage | VBE(sat) | -- | -- | 1.2 | V | IC=400mA, IB=40mA |
| Transition Frequency | fT | -- | 120 | -- | MHz | VCE=10V, IC=10mA |
| Collector Output Capacitance | Cob | -- | 5 | -- | pF | VCB=10V, f=1MHz |
