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GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289

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Anterwell Technology Ltd.

GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

GaAs DPDT Switch DC - 2 GHz   SW-289

 

Features

  • Very Low Power Consumption: 100 µW
  • Low Insertion Loss: 0.5 dB
  • High Isolation: 25 dB up to 2 GHz
  • Very High Intercept Point: 48 dBm IP3
  • Nanosecond Switching Speed
  • Temperature Range: -40˚C to +85˚C
  • Low Cost SOIC14 Plastic Package
  • Tape and Reel Packaging Available1

 

Description

M/A-COM’s SW-289 is a GaAs MMIC DPDT switch in a low cost SOIC 14-lead surface mount plastic package. The SW-289 is ideally suited for use where very low power consumption is re q u i re d . Typical applications include transmit/receive switching, switch matrices, digital step attenuators, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment.

 

The SW-289 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability. 

 

Electrical Specifications, TA = +25°C

 Parameter         Test Conditions2   Unit    Min.    Typ.   Max.
 Insertion Loss

   DC – 0.1 GHz

   DC – 0.5 GHz

   DC – 1.0 GHz

   DC – 2.0 GHz

  dB

  dB

  dB

  dB

 

  0.35

  0.35

   0.4

   0.6

   0.5

   0.5

   0.6

   0.8

  Isolation

   DC – 0.1 GHz

   DC – 0.1 GHz

   DC – 1.0 GHz

   DC – 2.0 GHz

  dB

  dB

  dB

  dB

  50

  40

  32

  20

  56

  43

  35

  23

 
  VSWR   DC – 2.0 GHz   1.3:1  

  Trise, Tfall

  Ton, Toff

  Transients

  10% to 90% RF, 90% to 10% RF

  50% Control to 90% RF, 50% Control to 10% RF

   In Band

  nS

  nS

  mV

 

  3

  6

  15

 

  One dB

  Compression

  Input Power                         0.05 GHz

  Input Power                         0.5 – 2.0 GHz

  dBm

  dBm

 

  22

  27

 
  IP2

  Measured Relative              0.05 GHz

  to Input Power                     0.5 – 2.0 GHz

  (for two-tone input power up to +5 dBm)

  dBm

  dBm

  

 

  54

  66

  

 
  IP3

  Measured Relative               0.05 GHz

  to Input Power                      0.5 – 2.0 GHz

  (for two-tone input power up to +5 dBm)

  dBm

  dBm

  

 

  45

  48

  

 

1. Refer to “Tape and Reel Packaging” section, or contact factory.

2. All measurements with 0, -5 V control voltages at 1 GHz in a 50W system, unless otherwise specified.

 

Absolute Maximum Ratings1

   Parameter    Absolute Maximum

 Max. Input Power

 0.05 GHz

 0.5 – 2.0 GHz

 Control Voltage

 Operating Temperature

 Storage Temperature

 

  +27 dBm

  +34 dBm

  +5 V, -8.5 V

  -40°C to +85°C

  -65°C to +150°C

1.Operation of this device above any one of these

   parameters may cause permanent damage.

 

Functional Schematic

 

Typical Performance

 

 

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