Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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MHL21336 Mosfet Power Module IC Parts 3G Band RF Linear LDMOS Amplifier
3G Band RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
• Third Order Intercept: 45 dBm Typ
• Power Gain: 31 dB Typ (@ f = 2140 MHz)
• Input VSWR 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• N Suffix Indicates Lead-Free Terminations
| Rating | Symbol | Value | Unit | |
| DC Supply Voltage | VDD | 30 | Vdc | |
| RF Input Power | Pin | +5 | dBm | |
| Storage Temperature Range | Tstg | - 40 to +100 | °C |
