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Address: No.8 Tianshan road, Xinbei district,Changzhou,Jiangsu,China.
Contact name:Amigo Deng
Changzhou Bextreme Shell Motor Technology Co.,Ltd |
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JY12M N and P Channel 30V MOSFET for BLDC motor driver
GENERAL DESCRIPTION
The JY12M is the N and P Channel logic enhancement mode power field
transistors
are produced using high cell density DMOS trench technology. This
high density
process is especially tailored to minimize on-state resistance.
These devices are
particularly suited for low voltage application such as cellular
phone and notebook
computer power management and other battery powered circuits where
high-side
switching, and low in-line power loss are needed in a very small
outline surface
mount package.
FEATURES
| Device | RDS(ON) MAX | IDMAX(25ºC) |
| N-Channel | 20mΩ@VGS=10V | 8.5A |
| 32mΩ@VGS=4.5V | 7.0A | |
| P-Channel | 45mΩ@VGS=-10V | -5.5A |
| 85mΩ@VGS=-4.5V | -4.1A |
● Low Input Capacitance
● Fast Switching Speed
APPLICATIONS
● Power Management
● DC/DC Converter
● DC Motor Control
● LCD TV & Monitor Display Inverter
● CCFL inverter
Absolute Maximum Ratings(Ta=25ºC Unless Otherwise Noted)
| Parameter | Symbol | N Channel | P Channel | Unit | |||
| 10 sec | Steady | 10 sec | Steady | ||||
| Drain Source Voltage | VDSS | 30 | -30 | V | |||
| Gate Source Voltage | VDSS | ±20 | ±20 | ||||
| Continuous Drain Current | Ta=25 ºC | ID | 8.5 | 6.5 | -7.0 | -5.3 | A |
| Ta=70 ºC | 6.8 | 5.1 | -5.5 | -4.1 | |||
| Pulsed Drain Current | IDM | 30 | -30 | ||||
| Maximum Power Dissipation | Ta=25 ºC | PD | 1.5 | W | |||
| Ta=70 ºC | 0.95 | ||||||
| Operating Junction Temperature | TJ | -55 to 150 | ºC | ||||
| Thermal Resistance Junction to Ambient | RθJA | 61 | 100 | 62 | 103 | ºC/W | |
| Thermal Resistance Junction to Case | RθJC | 15 | 15 | ºC/W |
Electrical Characteristics(Ta=25ºC Unless Otherwise Noted)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
| Static | |||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250uA | N-Ch | 1.0 | 1.5 | 3.0 | V |
| VDS=VGS,ID=-250uA | P-Ch | -1.0 | -1.5 | -3.0 | |||
| IGSS | Gate Leakage Current | VDS=0V, VGS=±20V | N-Ch | ±100 | nA | ||
| P-Ch | ±100 | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=30V, VGS=0V | N-Ch | 1 | uA | ||
| VDS=-30V, VGS=0V | P-Ch | -1 | |||||
| ID(ON) | On-State Drain Current | VDS≥5V, VGS=10V | N-Ch | 20 | A | ||
| VDS≤-5V, VGS=-10V | P-Ch | -20 | |||||
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V,ID=7.4A | N-Ch | 15 | 20 | mΩ | |
| VGS=-10V,ID=-5.2A | P-Ch | 38 | 45 | ||||
| VGS=4.5V,ID=6.0A | N-Ch | 23 | 32 | ||||
| VGS=-4.5V,ID=-4.0A | P-Ch | 65 | 85 | ||||
| VSD | Diode Forward Voltage | IS=1.7A,VGS=0V | N-Ch | 0.8 | 1.2 | V | |
| IS=-1.7A,VGS=0V | P-Ch | -0.8 | -1.2 |
DOWNLOAD JY12M USER MANUAL
