|
[China]
Trade Verify
Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
SZ ADE Electronics Co., Ltd |
|
Verified Suppliers
|
|
|
SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta), 104W
(Tc)
MOSFET N-CH 60V 60A PPAK SO-8 Surface Mount PowerPAK® SO-8
Specifications of SIR662DP-T1-GE3
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Single FETs, MOSFETs | |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4365 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SIR662 |
Features of SIR662DP-T1-GE3
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Low Qg for high efficiency
Applications of SIR662DP-T1-GE3
• Primary side switch
• POL
• Synchronous rectifier
• DC/DC converter
• Amusement system
• Industrial
• LED backlighting
Environmental & Export Classifications of SIR662DP-T1-GE3
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
