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[China]
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Address: Room 405, Building A2, Niushang Zhigu, United Industrial Park, Fengtang Avenue, Shenzhen，Guangdong, China. Post code: 518100
Contact name:Amy
SZ ADE Electronics Co., Ltd |
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Verified Suppliers
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MMBT3904 Transistor IC Chip 200MA SILICON NPN EPITAXIAL PLAN
Bipolar (BJT) Transistor NPN 40 V 200 mA 250MHz 300 mW Surface
Mount SOT-23
Specifications of MMBT3904
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Single Bipolar Transistors | |
| Mfr | ANBON SEMICONDUCTOR (INT'L) LIMITED |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Power - Max | 300 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23 |
| Base Product Number | MMBT390 |
Features of MMBT3904
• High collector-emitterbreakdien voltage. (BVCEO 40V Min.@Ic=1mA)
• Small load switch transistor with High Gain and Low Saturation,
is designed for General purpose amplifier and switching
applications at collector current.
• Capable of 225mW power dissipation.
• Lead-free parts for green partner,exceeds Environmental Standards
of MIL-STD-19500/228
• Suffix “-H” indicates Halogen-free part, ex. MMBT3904-H.
Environmental & Export Classifications of MMBT3904
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
