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R5F100FGAFP#50 Tantalum Chip Capacitor Ic Mcu 16bit 128kb Flash 44lqfp

SZ ADE Electronics Co., Ltd

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R5F100FGAFP#50 Tantalum Chip Capacitor Ic Mcu 16bit 128kb Flash 44lqfp

Country/Region china
City & Province shenzhen guangdong
Categories Other Metals & Metal Products
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Product Details

R5F100FGAFP#50 Tantalum Chip Capacitor Ic Mcu 16bit 128kb Flash 44lqfp
 

RL78 RL78/G13 Microcontroller IC 16-Bit 32MHz 128KB (128K x 8) FLASH 44-LQFP (10x10)

 

Specifications of R5F100FGAFP#50

 

TYPEDESCRIPTION
CategoryIntegrated Circuits (ICs)
Embedded
Microcontrollers
MfrRenesas Electronics America Inc
SeriesRL78/G13
PackageTape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Product StatusActive
Digi-Key ProgrammableNot Verified
Core ProcessorRL78
Core Size16-Bit
Speed32MHz
ConnectivityCSI, I²C, LINbus, UART/USART
PeripheralsDMA, LVD, POR, PWM, WDT
Number of I/O31
Program Memory Size128KB (128K x 8)
Program Memory TypeFLASH
EEPROM Size8K x 8
RAM Size12K x 8
Voltage - Supply (Vcc/Vdd)1.6V ~ 5.5V
Data ConvertersA/D 10x8/10b
Oscillator TypeInternal
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case44-LQFP
Supplier Device Package44-LQFP (10x10)
Base Product NumberR5F100

 

FEATURES of R5F100FGAFP#50

 

Ultra-low power consumption technology

• VDD = single power supply voltage of 1.6 to 5.5 V

• HALT mode

• STOP mode

• SNOOZE mode

RL78 CPU core

• CISC architecture with 3-stage pipeline

• Minimum instruction execution time: Can be changedfrom high speed (0.03125 μs: @ 32 MHz operationwith high-speed on-chip oscillator) to ultra-low speed(30.5 μs: @ 32.768 kHz operation with subsystemclock)

• Address space: 1 MB

• General-purpose registers: (8-bit register × 8) × 4 banks

• On-chip RAM: 2 to 32 KB

Code flash memory

• Code flash memory: 16 to 512 KB

• Block size: 1 KB

• Prohibition of block erase and rewriting (securityfunction)

• On-chip debug function

• Self-programming (with boot swap function/flash shieldwindow function)

Data Flash Memory

• Data flash memory: 4 KB to 8 KB

• Back ground operation (BGO): Instructions can beexecuted from the program memory while rewriting thedata flash memory.

• Number of rewrites: 1,000,000 times (TYP.)

• Voltage of rewrites: VDD = 1.8 to 5.5 V

High-speed on-chip oscillator

• Select from 32 MHz, 24 MHz, 16 MHz, 12 MHz, 8 MHz,6 MHz, 4 MHz, 3 MHz, 2 MHz, and 1 MHz

• High accuracy: +/- 1.0 % (VDD = 1.8 to 5.5 V, TA = -20 to +85°C)Operating ambient temperature

• TA = -40 to +85°C (A: Consumer applications, D: Industrial applications )

• TA = -40 to +105°C (G: Industrial applications)

Power management and reset function

• On-chip power-on-reset (POR) circuit

• On-chip voltage detector (LVD) (Select interrupt and reset from 14 levels)

DMA (Direct Memory Access) controller

• 2/4 channels

• Number of clocks during transfer between 8/16-bit SFR and internal RAM: 2 clocks

 

Applications of R5F100FGAFP#50

 
• 16 bits × 16 bits = 32 bits (Unsigned or signed)
• 32 bits ÷ 32 bits = 32 bits (Unsigned)
• 16 bits × 16 bits + 32 bits = 32 bits (Unsigned or signed)
 

Environmental & Export Classifications of R5F100FGAFP#50

 

ATTRIBUTEDESCRIPTION
RoHS StatusROHS3 Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
REACH StatusREACH Unaffected
ECCN3A991A2
HTSUS8542.31.0001

 

 

 

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