Baoji Feiteng Metal Materials Co., Ltd. |
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Titanium Tube Target Titanium Gr1 ASTM B861-06 a 133OD*125ID*840L Vacuum Coating Target Sputtering
Item name | Titanium tube target |
Size | φ133*φ125*840 |
Grade | Gr1 |
Packaging | Vacuum package in wooden case |
Port of place | Xi'an port, Beijing port, Shanghai port, Guangzhou port, Shenzhen port |
Materials technology development trend of the target material is
closely related with the thin film technology development trend of
the downstream application industry, along with the application of
industry technical improvement on film products or components, the
technology of target should be changed also, greatly to replace the
original flat-panel display (FPD) in recent years, which is mainly
composed of the cathode ray tube (CRT) computer monitors and
television market. It will also greatly increase the technology and
market demand of ITO target material. In addition to storage
technology. The demand for high-density, large-capacity hard disks
and high-density erasable discs continues to increase. All of these
result in the change of the application industry's demand for
target materials. Below we will introduce the main application
fields of target materials and the development trend of target
materials in these fields respectively.
Among all the application industries, the semiconductor industry
has the most stringent quality requirements for target sputtering
films. Today, 12-inch (300 epistaxis) silicon chips have been made.
The interconnects are shrinking in width. Wafer manufacturers
require large size, high purity, low segregation and fine grain,
which requires better microstructure of the manufactured target.
The crystal particle diameter and uniformity of target material
have been considered as the key factors affecting the deposition
rate of thin films. In addition, the purity of the film is greatly
related to the purity of the target material. In the past, the
purity of 99.995% (4N5) copper target may be able to meet the
requirements of 0.35pm process of semiconductor manufacturers, but
it can not meet the requirements of 0.25um process, and the 0.18um
and even 0.13 m process. The purity of the target material
required will be above 5 or even 6 N. Compared with aluminium,
copper has higher resistance to electrical migration and lower
resistivity, can meet! The conductor process is required for
submicron wiring below 0.25um, but brings with it other problems:
low adhesion strength of copper to organic dielectric materials. In
addition, it is easy to react, which leads to corrosion and
disconnection of the copper interconnect in the process of use. To
solve these problems, a barrier layer needs to be placed between
the copper and the dielectric layer. The barrier material generally
uses metals and compounds with high melting point and high
resistivity, so the barrier layer thickness is required to be less
than 50 nm, and the adhesion performance with copper and
dielectric materials is good. The barrier materials for copper
interconnects and aluminium interconnects are different. New target
materials need to be developed. The target material for the copper
interconnect barrier layer includes Ta, W, TaSi, WSi, etc. But Ta
and W are refractory metals. It is relatively difficult to make,
and molybdenum, chromium and other gold is being studied as an
alternative material.
Features
1. Low density and high strength
2. Customized according to the drawings required by customers
3. Strong corrosion resistance
4. Strong heat resistance
5. Low temperature resistance
6. Heat resistance