SGRAM-GDDR5 EMMC Memory Chips 32 Bit 4G 128MX32 SMD SMT

EDW4032BABG-70-F-R Original DRAM GDDR5 4G 128MX32 FBGA Memory

Features

• VDD = VDDQ = 1.6V/1.55V/1.5V ±3% and 1.35V ±3%

• Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s

• 16 internal banks • Four bank groups for tCCDL = 3 tCK

• 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 • Burst length (BL): 8 only

• Programmable CAS latency: 7–25

• Programmable WRITE latency: 4–7

• Programmable CRC READ latency: 2–3

• Programmable CRC WRITE latency: 8–14

• Programmable EDC hold pattern for CDR

• Precharge: Auto option for each burst access

• Auto refresh and self refresh modes

• Refresh cycles: 16,384 cycles/32ms

• Interface: Pseudo open drain (POD-15) compatible outputs: 40Ω pull-down, 60Ω pull-up

• On-die termination (ODT): 60Ω or 120Ω (NOM)

• ODT and output driver strength auto calibration with external resistor ZQ pin: 120Ω

• Programmable termination and driver strength offsets

• Selectable external or internal VREF for data inputs; programmable offsets for internal VREF

• Separate external VREF for address/command inputs

• TC = 0°C to +95°C

• x32/x16 mode configuration set at power-up with EDC pin

• Single-ended interface for data, address, and command

• Quarter data rate differential clock inputs CK_t, CK_c for address and commands

• Two half data rate differential clock inputs, WCK_t and WCK_c, each associated with two data bytes (DQ, DBI_n, EDC)

• DDR data (WCK) and addressing (CK)

• SDR command (CK)

• Write data mask function via address bus (single/ double byte mask)

• Data bus inversion (DBI) and address bus inversion (ABI)

• Input/output PLL on/off mode

• Duty cycle corrector (DCC) for data clock (WCK)

• Digital RAS lockout