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KP 200A 3200~3600V Thyristor KP200 Disc type Phase control Thyristors Silicon Controlled Rectifier

Guangzhou top hua hui international technology co.,ltd
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Address: No. 10 ,Zhang Hu village , Niushou Town,Fan Cheng Area ,Xiangyang City, Hubei Provience, China

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Guangzhou top hua hui international technology co.,ltd

KP 200A 3200~3600V Thyristor KP200 Disc type Phase control Thyristors Silicon Controlled Rectifier

Country/Region china
City & Province hubei
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Product Details

KP 200A 3200~3600V Thyristor KP200 Disc type Phase control Thyristors Silicon Controlled Rectifier

 

Feature

1,Voltage upto 4000V,Current upto 3500A 

2,International standard cases

3,Fast turn off for fast thyristor(tq<25us)

4, Hermetic metal cases with Ceramic insulators

Typical Applications for fast thyristor

1,Inductive heating,Smelting furnace

2,Electroplate,Metal plating

3,Inverters,high frequency converters

4,Soft starters,motor control,Traction

5,Controlled rectifiers

6,UPS and power supplies

7,Welder

SymbolDefinitionConditions min.typ.max.Unit
Vmax. non-repetitive reverse/forward blocking voltageTJ = 25°C  1900V
Vmax. repetitive reverse/forward blocking voltageTJ = 25°C  1800V
VTOn-state voltageIT=2200 ATJ = 25°C  1.85V
IT(AV)average forward currentTC=25°C   1000A
IT(RMS)RMS forward current180° sine   2300A
RthJCthermal resistance junction to case     K/W
RthCHthermal resistance case to heatsink     K/W
RthJKthermal resistance junction to heatsink    0.024K/W
ITSMmax. forward surge currentt = 10 ms; (50 Hz), sineTJ = 25°C  12.1kA
I²tvalue for fusingt = 10 ms; (50 Hz), sineTJ = 25°C  732kA²s
di/dtRate of rise of on-state current

TJ = 125°C; f = 50 Hz

tP=200µs;diG/dt=0.15A/µs;

IG=0.15A;VD= 2/3
V
DRM

repetitive  200A/µs
non-repet  400A/µs
dv/dtMaximum linear rate of rise of off-state voltage

VD= 2/3VDRM

RGK =∞; method 1 (linear voltage rise)

TJ = 125°C  200V/µs
VGTgate trigger voltageVD = 6VTJ = 25°C  3.0V
IGTgate trigger currentVD = 6VTJ = 25°C  300mA
ILlatching current TJ = 25°C   A
IHholding current TJ = 25°C  500mA
tgdgate controlled delay time TJ = 25°C 1.01.5µs
tqTurn-off timeVR=10 V; IT=20A; VD= 2/3
V
DRM
TJ = 150°C 600650µs
Tstgstorage temperature  -40 125°C
TJvirtual junction temperature  -40 125°C
WtWeight     g
Fmounting force  19


 

 

 

 

As a 12years experience listed company in China,we specialize on power semiconductor.Such as phase control thyristors , fast turn-off thyristors , high frequency thyristors , bi-directional control thyristors ,rectifer diodes, fast recovery diodes.Thyristor modules , diode modules , thyristors / diode modules , single / three phases rectification bringe modules . Water cooling heatsinks of ss series , air cooling heatsinks of SF series , Moulding heatsinks factory .

We will do 100% inspection before we deliver the goods to our customers. Long term excellent quality service earns good reputation for our company, we promise our quality, price and lead-time are the best.

With high quality and competitive price, our products sell well in the Middle East, Europe, Southeast Asia, South America and Africa

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