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MK8 Assembly Section Advanced Process Technology Cigarette Maker Transistor
A transistor is a semiconductor device used to amplify or switch electronic signals and electrical power. Transistors are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit.
1. Mechanism
A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.
1. IRFZ44NS/LPbF
| Parameter | Min. | |
| V(BR)DSS | Drain-to-Source Breakdown Voltage | 55 |
| △V(BR)DSS 仏 Tj | Breakdown Voltage Temp. Coefficient | — |
| RDS(on) | Static Drain-to-Source On-Resistance | — |
| VGS(th) | Gate Threshold Voltage | 2.0 |
| gts | Forward Transconductance | 19 |
| bss | Drain-to-Source Leakage Current | — |
| — | ||
| loss | Gate-to-Source Forward Leakage | — |
| Gate-to-Source Reverse Leakage | — | |
| Qg | Total Gate Charge | — |
| Qgs | Gate-to-Source Charge | — |
| Qgd | Gate-to-Drain ("Miller") Charge | — |
1. Absolute Maximum Ratings
| Parameter | Max. | Units | |
| Id @ Tq = 25°C | Continuous Drain Current, Vgs @ 10V | 49 | A |
| lD @ Tc = 100°C | Continuous Drain Current, Vgs @ 10V | 35 | |
| Idm | Pulsed Drain Current ① | 160 | |
| PD @Ta = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 94 | W |
| Linear Derating Factor | 0.63 | W/°C | |
| Vgs | Gate-to-Source Voltage | ±20 | V |
| Iar | Avalanche Current① | 25 | A |
| Ear | Repetitive Avalanche Energy® | 9.4 | mJ |
| dv/dt | Peak Diode Recovery dv/dt ③ | 5.0 | V/ns |
| Tj | Operating Junction and | -55 to + 175 | °C |
