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Metal Case 10K OHM PIR Sensor Module 8mm Light Dependent Resistor Metal Case

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Metal Case 10K OHM PIR Sensor Module 8mm Light Dependent Resistor Metal Case

Country/Region china
City & Province dongguan guangdong
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Product Details

 

Metal Case Photoresistor Photoconductive Cell Light Dependent Resistor LDR 8mm

 

TYPICAL APPLICATIONS Of The Photoconductive Cell Light Dependent Resistor LDR 8mm


* Auto Flash For Cameras

* Photoelectric Control

* Room Light Control

* Room Light Control
* Photomusical I.C.

* Industrial control

* Photoswitch

* Electronic Toys

 

 

Description Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

CdS Photoconductive Cells is a resistor which made of semi-conductor material,and the conductance change with luminance variationg.The CdS Photoconductive cells canbe manufactured with different figures and illuminated area based on this characteristic.CdS Photoconductive cells is widely used in many industries,such as toys,lamps,camera,etc.

 

 

Features Of The Photoconductive Cell Light Dependent Resistor LDR 8mm 

 

* Epoxy encapsulated
* Quick Response
* Small Size
* High Sensitivity
* Rebliable Performance
* Good Characteristic of Spectrum

 

 

ELECTRO-OPTICAL CHARACTERICTICS Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

ParametersCharactericticsUnits
Light Resistance(at 10lux)4-10KΩ
Dark Resistance(at 0 lux/Min)0.5MΩ
Gamma Value( at 100-10lux)0.6r
Power Dissipation(at 25℃)100MW
Max Voltage(at 25℃)150VDC
Spectral Response peak(at 25℃)560nm
Ambient Temperature Range-30~+70 
Response timeIncrease20 ms
Response timeDecrease30 ms


 

Component Information Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

Component NameROSHNotice
Resin CoatingYES--
CdsNOComposition than 100 PPM
ElectrodeYES--
Ceramic SubstrateYES--
Lead TerminalYES--

 

 

SCHEMATIC DRAWING Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

 

 

OUTLINE Of The Photoconductive Cell Light Dependent Resistor LDR 8mm (Unit: mm)

 

 

 

Series Specification Of Metal Cased CDS 

 

ModelP/NMax. voltage

Environment temp

Peak spectral

Light

Resistance

Dark Resistance

100/10

Response

time

(nm)Ev=10Lux @2856°KEv=0LuxmS
(VDC) (KΩ)(MΩ)Rise TimeFall Time
TO-18LXD4526150-30~+705508-200.50.63030
LXD4537150-30~+7055018-5020.73030
LXD4548150-30~+7055045-14050.83030
6 MLXD6516150-30~+705505-100.50.63030
LXD6528150-30~+705508-2040.72030
LXD6537150-30~+7055018-50100.752030
LXD6548150-30~+7055045-140200.852030
TO-5LXD8516150-30~+705605-100.50.52030
LXD8528150-30~+705608-2020.72030
LXD8638150-30~+7056030-5050.82030
LXD8649150-30~+7056045-140100.82030
TO-8LXD12528250-30~+705608-2020.62030
LXD12537250-30~+7056018-5050.72030
LXD12549250-30~+7056045-140100.83030

 

 

SPECTRAL RESPONSE Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

 

 

ILLUNINANCE Vs. PHOTO RESISTANCE Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

 

 

TEST CONDITIONS Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

Light Resistance
Dark Resistance
Light resistance:A light source(2856k) At 10Lux
Dark resistance:data@10sec,after cutting off 10Lux light r=Lg(R10/R100)
Workable
Tempture Change
Testing
Hight tempture::70℃±5℃
Time:30M
Incideng light:dark placing
Testing time:24hr
Low tempture::-30℃±5℃
Time:30min
Incident light:above dark placing as a recycle,testing time:24hr
Workable
Constant Tempture
Testing
Tempture:40±5℃
Moisture :90-95%
Incident light:dark placing
Testing time:48hr
Workable
Lead High Tempture
Testing
At the root of lead 90 degree curving,5mm above the root,loading
100g charge
Welding tempture::260℃
Heating time:Max.35,distance between welding and base:5mm
Workable

 

 

Package Of The Photoconductive Cell Light Dependent Resistor LDR 8mm

 

Bulk, 40Pcs /bag-> 5Bag/Box = 200Pcs _> 2000PCS = 10 Box = 20 Bag = 1 Carton

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