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GB3 A1DPS 1100nm 85c Photo Switch Sensor 0.1uA Photo Sensor Light Switch

Dongguan Ampfort Electronics Co., Ltd.

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Address: No.1, Yixiang ,Liwu Industrial Park,Liwuyuan Village,Xihu District, Shilong Town,Dongguan 523325,Guangdong ,China

Contact name:James Lai

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GB3 A1DPS 1100nm 85c Photo Switch Sensor 0.1uA Photo Sensor Light Switch

Country/Region china
City & Province dongguan guangdong
Categories Other Switches
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Product Details

 
ROHS Complaint Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 
■ Product Description Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 
LXD/GB3-A1DPS light sensor has spectral response almost only the visible to near IR range, LXD/GB3-A1DPS offers small torelance in different color temperatures than the conventional type. LXD/GB3-A1DPS is encapsulated in a plastic package having the same shape as metal packages. The shape of LXD/GB3-A1DPS also resembles our 5R type visible sensors (CdS photoconductive cells), so LXD/GB3-A1DPS can be used as a replacement for those visible and near IR sensors.
 
 
■ Features Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 
* Operation just as easy to use as a phototransistor
* Lower output-current fluctuations compared with Phototransistors and CdS photoconductive cells.
* Excellent linearity, Good linear current output over illumination
* Small torelance for light sources producing the same illuminance At different color temperatures.
* Low dark current and high photo sensitivity.
* RoHS compliant , cadmium-free alternative to photocells.
 
 
■ Applications Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 
* Interior and exterior light switching (dusk/dawn switch)
* Interior and exterior light control (dimming)
* Automotive headlight dimmer
* Display contrast control
* Colorimeters
* Replacement for CdS photocells
 
 
Absolute maximum ratings / (Typ.Ta=25℃) Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO12V
Emitter-Collector-VoltageVEOC5V
Power Dissipation atPc70mW
Storage TemperatureTopr-25~85
Soldering TemperatureTstg-40~+100

 
 
Electro-Optical Characteristics (Typ.Ta=25℃) Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 

ParameterSymbolConditionMin.Typ.Max.Unit
Spectral response rangeλp/-850-nm
Peak sensitivity wavelengthλd/400-1100nm
Dark currentIDVdd=5V Ev=0 Lux--0.1uA
PhotocurrentIL(1)Vdd=5V Ev=10 Lux3.0-5.0uA
Vdd=5V Ev=30 Lux9.0-15.0uA
PhotocurrentIL(2)*Vdd=5V Ev=100 Lux304050uA
Rise timeTrVCE=5V IC=1mA RL=1000Ω15ms
Fall timeTf15

     Spectral response                              Light current Vs.Ee                      Dark Current Vs.Temperature

 
 
■ Operating circuit example Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 

 
 
■ Dimensional outlines Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS (unit:mm)
  

 
 
Series Specifications Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
 

Specifi-cations
(mm)
ModelMin Operational Voltage
(V)
IR Rejection CapabilityLight Current (uA)Dark CurrentPeak Spectral Response
@ 10 Lux@ 100 Lux@ 200 Lux@ 1000 Lux@ 2000 Lux@ 0 Lux
¢3LXD/GB3-A1C2.0 V        
Iss = 250uAYES12.5125250--< 1 nA520nm
¢5LXD/GB5-A1C2.0 V        
Iss = 250uAYES12.5125250--< 1 nA520nm
¢3LXD/GB3-A2C2.0 V        
Iss = 250uAYES-15-150300< 1 nA520nm
¢5LXD/GB5-A2C2.0 V        
Iss = 250uAYES-15-150300< 1 nA520nm
¢5LXD/GB5-A1DPF2.0 VYES113750-1318-4uA520nm
Iss = 250uA
¢5LXD/GB5-A1DPB2.0 V   240    
IC=20mA,IB=100uAYES17170--< 10 nA850nm
¢5LXD/GB5-A1DPM2.0 V   600    
IC=20mA,IB=100uAYES30300--< 10 nA850nm















































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