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Thyristor Power Modules Semiconductor Components Skkt162 16e Scr Power Controller

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Address: 88 Century Dadao, Pudong New Area, Shanghai, China

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DZ Iron Steel Group

Thyristor Power Modules Semiconductor Components Skkt162 16e Scr Power Controller

Country/Region	china
City & Province	shanghai shanghai

Product Details

Thyristor Power Modules Semiconductor Components Skkt162 16e Scr Power Controller

Model No. SKKT162/16 (we can offer other models such as MTT,PK,TT,SKKT,SKKH,IRKT,MCC,CTT,PD,TM...)

Produc Name: thyristor power modules semiconductor components skkt162 16e scr power controller

Applications:

1. ac/dc electric-machine's control and various rectifying controlling&industral-heating controlling

2. light-regulation

3. non-touch switch

4. soft-starters for electromotor

5. electric welder / frequency transformer/ ups power

6. charging and discharging of battery

7. building industry machinery

# Modules Semiconductor Skkt162 Properties

	Specification	Test Condition	TJ	parameter values			Unit
	Specification	Test Condition	TJ	Min.	Typical	Max.	Unit
It(AV)	Tongtai average current	Sine wave at 180℃, 50Hz, double-sided heat dissipation, TC=85℃	125			55	A
It(RMS)	Square mean root current		125			86	A
Vdrm	repetitive peak off-state voltage	VDRM & VRRM tp=10rms VDSM & VRSM= VDRM& VRRM +200v	125	500		2500	V
Vrrm	repetitive peak reverse voltage	VDRM & VRRM tp=10rms VDSM & VRSM= VDRM& VRRM +200v	125	500		2500	V
Idrm	repetitive peak off-state current	VDM = VDRM VRM= VRRM	125			8	mA
Irrm	repetitive peak reverse current	VDM = VDRM VRM= VRRM	150			8	mA
Itsm	Forward non-repeating surge current	10ms bottom width,half-sinusoid Vr=0.6Vrrm	125			1.25	KA
I²t	Surge current squared time product	10ms bottom width,half-sinusoid Vr=0.6Vrrm	25			7.80	A2S103
Vto	threshold voltage		125			0.85	V
rt	slope resistance		125			3.47	m
Vtm	peak forward voltage	ITM= 170A	25			1.10	V
dv/dt	Critical rise rate of on-state voltage	VDM=0.67VDRM	125			800	V/us
di/dt	Critical rise rate of on-state current	IMT=52A Gate trigger current amplitudeIGR=1.5A Gate current rise time tr≤ 0.5us	125			50	A/us
Igt	gate trigger current	VA=12V,IA=1A	25	30		100	mA
Vgt	gate trigger voltage			0.8		2.5	V
Ih	holding current			20		150	mA
Vgd	gate non-trigger voltage	VDM=0.67VDRM	125	0.2			V
Rth(j-c)	Thermal impedance (knot to shell)	180℃ sine wave, single side heat dissipation				0.530	℃ /W
Rth(c-h)	Thermal impedance (shell to radiator)	180℃ sine wave, single side heat dissipation				0.2	℃ /W
Viso	isolation voltage			2500			V
Fm	mounting torque(M5)				4		N-m
Fm	mounting torque(M6)				6		N-m
Tstq	Storage temperature			-40		125	℃
Wt	Quality	110g					g
outline	Appearence	101f

* Packing Details: Carton.
* Delivery Details: 7 days after getting payment.Name card.

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