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[China]
Trade Verify
Address: Building 36, Tianan Smart City, No. 228 Linghu Avenue, Xinwu District, Wuxi City, Jiangsu Province
Contact name:Wang
WUXI LEO TECHNOLOGY CO.,LTD |
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Verified Suppliers
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Features:
□ High blocking voltage with low On-resistance
□ High speed switching with low capacitances
□ Fast intrinsic diode with low reverse recovery (Qrr)
Typical Applications:
□ PV Inverters
□ Charging Piles
□ Energy storage systems
□ Industrial power supply
□ Industrial Motors
Maximum Ratings @Tc=25°C (unless otherwise specified)
| Item | Symbol | Conditions | Values | Unit |
| Drain-Source Voltage | VDSmax | VGS=0V, ID=100μA | 1200 | V |
| Gate-Source Voltage | VGSop | Static | -5/+20 | V |
| Maximum Gate-Source Voltage | VGSmax | Static | -8/+22 | V |
Continuous Drain Current | ID | VGS=20V, Tc=25°C | 75 | A |
| VGS=20V, Tc=100°C | 53 | |||
| Pulsed Drain Current | ID(pulse) | Pulse width tp limited by Tjmax | 120 | A |
| Power Dissipation | PD | TC=25°C, Tj=175°C | 366 | W |
| Operating Junction Range | Tj | -55 to +175 | °C | |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Item | Symbol | Conditions |
min. | Values typ. |
max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=100μA | 1200 | - | - | V |
Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=10mA | 2.0 | 2.8 | 3.5 |
V |
| VDS=VGS , ID=10mA, Tj=175°C | - | 1.9 | - | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=1200V, VGS=0V | - | 1 | 100 | μA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | 10 | 100 | nA |
Drain-Source On-State Resistance | RDS(on) | VGS=20V, ID=35A | - | 40 | 60 |
mΩ |
| VGS=20V, ID=35A, Tj=175°C | - | 64 | - | |||
| VGS=18V, ID=35A | - | 43 | 70 | |||
| VGS=18V, ID=35A, Tj=175°C | - | 67 | - | |||
Transconductance | gfs | VDS=20V, IDS=35A | - | 20 | - |
S |
| VDS=20V, IDS=35A, Tj=175°C | - | 18 | - | |||
| Turn-On Switching Energy (Body Diode FWD) | Eon | VDS=800V, VGS=-5V/20V, ID=35A, | - | 635 |
- | |
Turn-Off Switching Energy (Body Diode FWD) | Eoff | RG(ext)=2.5Ω, L=200μH, Tj=25°C FWD=SPS40MA12E4S |
- | 201 |
- | μJ |
| Turn-On Delay Time | td(on) | - | 9 | - | ||
| Rise Time | tr | VDD=800V, | - | 30 | - | |
VGS=-5V/20V, ID=35A, | ns | |||||
| Turn-Off Delay Time | td(off) | - | 31 | - | ||
| RG(ext)=2.5Ω, L=200μH | ||||||
| Fall Time | tf | - | 12 | - | ||
| Gate to Source Charge | Qgs |
VDS=800V, VGS=-5V/20V, ID=35A | - | 40 | - | |
| Gate to Drain Charge | Qgd | - | 60 | - | nC | |
| Total Gate Charge | Qg | - | 163 | - | ||
| Input Capacitance | Ciss |
VGS=0V, VDS=1000V f=1MHz VAC=25mV | - | 2534 | - |
pF |
| Output Capacitance | Coss | - | 110 | - | ||
| Reverse Transfer Capacitance | Crss | - | 26 | - | ||
| COSS Stored Energy | Eoss | - | 70 | - | μJ | |
| Internal Gate Resistance | RG(int) | f=1MHz, VAC=25mV | - | 1.6 | - | Ω |
Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)
| Item | Symbol | Conditions |
min. | Values typ. |
max. | Unit |
Diode Forward Voltage | VSD | VGS=-5V, ISD=20A | - | 4.9 | 7 | V |
| VGS=-5V, ISD=20A, Tj=175°C | - | 4.1 | - | V | ||
Continuous Diode Forward Current | IS | VGS=-5V | - | 75 | - | A |
Reverse Recovery Time | trr | VGS=-5V, | - | 32 | - | ns |
Reverse Recovery Charge | Qrr | ISD=35A, | - | 769 | - | nC |
| Peak Reverse Recovery Current | Irrm | VR=800V, di/dt=3000A/μs | - | 39 | - | A |
Reverse Diode Characteristics @Tc=25°C (unless otherwise specified)
| Item | Symbol | Conditions | min. | Values typ. | max. | Unit |
| Thermal Resistance from Junction to Case | RθJC | - | 0.41 | - | ℃/W |
Typical Performance
Typical Performance
This is a Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with a voltage rating of 1200V and an on-state resistance (RDS(on)) of 40 milliohms (40mΩ). SiC MOSFETs are known for their high voltage capability and low on-state resistance, making them suitable for efficient power electronic applications such as high-frequency converters and electric vehicles. The 40mΩ on-state resistance indicates relatively low power losses during conduction, contributing to improved efficiency in high-power applications.
