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Coupled MOSFET / IGBT Gate Drive Transformer FA2659-AL 0.5-8 W Output

SHAREWAY TECHNOLOGY CO., LTD.

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Address: 706, Huafa xiezilou ,Huafa North Rd., Gongming Street , 518106 , SHEN ZHEN ,CHINA

Contact name:Nick Chou

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Coupled MOSFET / IGBT Gate Drive Transformer FA2659-AL 0.5-8 W Output

Country/Region china
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Product Details

FA2659-AL Gate Drive Transformer For Coupled MOSFET and IGBT Gate Drive Circuits


Product description:

Gate Drive Transformer Designed for transformer coupled MOSFET and IGBT gate drive circuits

 

Feature:

  • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz.
  • 2250 Vdc, one minute primary to secondary isolation
  • Requires only 56 mm2 of board space.
  • Core material Ferrite
  • Terminations RoHS compliant tin-silver over tin over nickel over phos bronze
  • Weight 700 mg
  • Ambient temperature –40°C to +125°C
  • Storage temperature Component: –40°C to +125°C.
  • Tape and reel packaging: –40°C to +80°C
  • Resistance to soldering heat Max three 40 second reflows at
    +260°C, parts cooled to room temperature between cycles
  • Moisture Sensitivity Level (MSL) 1 (unlimited floor life at <30°C /
    85% relative humidity)
  • Failures in Time (FIT) / Mean Time Between Failures (MTBF)
    38 per billion hours / 26,315,789 hours, calculated per Telcordia SR-332
  • Packaging 175/7″reel; 750/13″ reel Plastic tape: 24 mm wide,
    0.4 mm thick, 12 mm pocket spacing, 7.0 mm pocket depth

 

Part

number

Turns

ratio

pri : sec

Primary

inductance

±20 % (mH)

Leakage

inductance

max (μH)

 

Primary

DCR max

(Ohms)

Secondary

DCR max

(Ohms)

Volt-time

product

(V-μsec)

SRF

min

(MHz)

Capacitance

pri to sec

max (pF)

FA2659-AL1 : 1296.01.50.7950.65534.21.3921.9

 

1. Inductance measured at 100 kHz, 0.1 Vrms, 0 Adc
2. Leakage inductance measured at 100 kHz, 0.1 Vrms with secondary pins shorted.
3. SRF measured with coils connected in series using an Agilent/HP 4192 or equivalent.
4. Operating temperature range −40°C to +125°C.
5. Electrical specifications at 25°C.

 

 

FA2659-AL Gate Drive Transformer For Coupled MOSFET and IGBT Gate Drive Circuits


Shape and Dimensions:

 

 

Product Picture:

 

 

FA2659-AL Gate Drive Transformer For Coupled MOSFET and IGBT Gate Drive Circuits


HOW TO ORDER
1. Please send me your datasheet or part number you need.
2. We will offer the replacement quotation for your reference
3. The free samples are available for your approval.
4. After sample testing, we will step into the mass order.
5. The Proforma Invoice will send for your confirmation
6. After the goods finished, we send the goods to you and tell you the tracking number.
7. We will track your goods until you receive the goods.

Remarks:
1. Sample orders are avaliable.
2. Price is negotiable for orders of large quantity.
3. Customized orders (OEM/ODM orders) are avaliable.
4. Contact us for available flavors list. International Certifications:
1. ISO9001:2008
2. UL
3. Reach
4. RoHs

Our service:
1. 100% tested before shipping
2. Have alternative for Halo, Pluse, , We-online, Chilisin, Coilcraft......Same quality but better price
3. Free sample available
4. Provide new design for customer

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