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6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates

SHANGHAI FAMOUS TRADE CO.,LTD

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Address: Rm5-616,NO.851,Dianshanhu road; Qingpu area;shanghai city//201799

Contact name:Wang

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6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates

Country/Region china
City & Province shanghai shanghai
Categories Other Graphite Products
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Product Details

6 Inch Silicon Carbide SiC Coated Graphite Tray High Temperature Resistance Graphite Plates

Silicon carbide coated epitaxial sheet tray used in epitaxial furnace equipment/Silicon Carbide Coated Graphite SiC/Excellent Bending Strength Anti Corrosion Graphite Tray / Wafer Tray/Graphite composite plate high purity carbon graphite anode plate

 

Application
semiconductor integrated circuit
 
 
Features
purity quotient<5ppm
nano-scale coating and good doping uniformity
sealing performance well and strong paint coating bonding ability
resistant to corrosion block carbon element binding
 
 
Advantages
professional custom made service
short leading time
international process products and stable delivery time
rapidly product performance improvement services

 

CATALOGUE COMMON SIZE

GradeBulk densityFlexural StrengthCompressive Strength

Specific Resistivity

 

Ash Content
GSK-II1.72g/cc min15Mpa min32 Mpa min8.0μΩ•m max0.3% max
HPM-II1.78g/cc min18Mpa min35Mpa min10μΩ•m max0.1% max
HPM-III1.83g/cc min35Mpa min68Mpa min10μΩ•m max0.1% max
Various other grades graphite available. If your required material is not within above grades, please contact us without hesitate, our professional and experienced engineer will choose most suitable grade according to your specific application.
 

 


 

 

About ZMKJ Company

 
ZMKJ can provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next generation semiconductor material , with unique electrical properties and excellent thermal properties , compared to silicon wafer and GaAs wafer , SiC wafer is more suitable for high temperature and high power device application . SiC wafer can be supplied in diameter 2-6 inch , both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available . Please contact us for more product information .


Our Relation  Products 
Sapphire wafer& lens/  LiTaO3 Crystal/  SiC wafers/ LaAlO3 / SrTiO3/wafers/ Ruby Ball

FAQ

Q: What's the way of shipping and cost?

A:(1) We accept DHL, Fedex, EMS etc.

(2) it is fine If you have your own express account ,If not,we could help you ship them and

Freight is in accordance with the actual settlement.

 

Q: How to pay?

A: T/T 100% deposit before delivery.

 

Q: What's your MOQ?

A: (1) For inventory, the MOQ is 1pcs. if 2-5pcs it's better.

(2) For customized commen products, the MOQ is 10pcs up.

 

Q: What's the delivery time?

A: (1) For the standard products

For inventory: the delivery is 5 workdays after you place the order.

For customized products: the delivery is 2 -4 weeks after you order contact.

 

Q: Do you have standard products?

A: Our standard products in stock. as like substrates 4inch 0.35mm.

 

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