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B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

B772 High Voltage NPN Switching Transistor Emitter Base Voltage -5V

Country/Region china
City & Province shenzhen guangdong
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Product Details

SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)

 

 

FEATURE
 

 

Low speed switching

 

Marking :B772

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

SymbolParameterValueUnit
VCBOCollector-Base Voltage-40V
VCEOCollector-Emitter Voltage-30V
VEBOEmitter-Base Voltage-6V
ICCollector Current -Continuous-3A
PCCollector Power Dissipation0.5W
RӨJAThermal Resistance, Junction to Ambient250℃/W
TjJunction Temperature150
TstgStorage Temperature-55~150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100μA ,IE=0-40  V
Collector-emitter breakdown voltageV(BR)CEOIC= -10mA , IB=0-30  V
Emitter-base breakdown voltageV(BR)EBOIE= -100μA,IC=0-6  V
Collector cut-off currentICBOVCB= -40V, IE=0  -1μA
Collector cut-off currentICEOVCE=-30V, IB=0  -10μA
Emitter cut-off currentIEBOVEB=-6V, IC=0  -1μA
DC current gainhFEVCE= -2V, IC= -1A60 400 
Collector-emitter saturation voltageVCE(sat)IC=-2A, IB= -0.2A  -0.5V
Base-emitter saturation voltageVBE(sat)IC=-2A, IB= -0.2A  -1.5V

 

Transition frequency

 

fT

VCE= -5V, IC=-0.1A

f =10MHz

 

50

  

 

MHz

 
 
 

Typical Characteristics

 

 

 

 


 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A1.4001.6000.0550.063
b0.3200.5200.0130.020
b10.4000.5800.0160.023
c0.3500.4400.0140.017
D4.4004.6000.1730.181
D11.550 REF.0.061 REF.
E2.3002.6000.0910.102
E13.9404.2500.1550.167
e1.500 TYP.0.060 TYP.
e13.000 TYP.0.118 TYP.
L0.9001.2000.0350.047

 

 

 

 

CLASSIFICATION OF hFE

 

RankROYGR
Range60-120100-200160-320200-400

 

 

 Typical Characteristics

 


 

 
 
 

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