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MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

MMBTA56 NPN Darlington Power Transistor , Fast Switching Transistor NPN

Country/Region china
City & Province shenzhen guangdong
Categories Switching Power Supply
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Product Details

SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN)

 

FEATURE
 

l General Purpose Amplifier Applications

Marking :2GM

 

 

 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-80V
VCEOCollector-Emitter Voltage-80V
VEBOEmitter-Base Voltage-4V
ICCollector Current-500mA
PCCollector Power Dissipation225mW
RΘJAThermal Resistance From Junction To Ambient555℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150

 
 
 
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-100µA, IE=0-80  V
Collector-emitter breakdown voltageV(BR)CEOIC=-1mA, IB=0-80  V
Emitter-base breakdown voltageV(BR)EBOIE=-100µA, IC=0-4  V
Collector cut-off currentICBOVCB=-80V, IE=0  -0.1µA
Collector cut-off currentICEOVCE=-60V, IB=0  -1µA
Emitter-base breakdown voltageIEBOVEB=-4V, IC=0  -0.1µA
DC current gainhFE(1)VCE=-1V, IC=-10mA100 400 
 hFE(2)VCE=-1V, IC=-100mA100   
Collector-emitter saturation voltageVCE(sat)IC=-100mA, IB=-10mA  -0.25V
Base-emitter voltageVBEVCE=-1V, IC=-100mA  -1.2V
Transition frequencyfTVCE=-1V,IC=-100mA, f=100MHz50  MHz

 
 
 

 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.2001.4000.0470.055
E12.2502.5500.0890.100
e0.950 TYP0.037 TYP
e11.8002.0000.0710.079
L0.550 REF0.022 REF
L10.3000.5000.0120.020
θ

 

 

 

Typical Characteristics

 
 



 
 
 
 

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