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MBR3060CT / MBR3060FCT Schottky Barrier Rectifier Diode High Surge Capability

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Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Contact name:David Lee

Country/Region	china
City & Province	shenzhen guangdong

MBR3060CT / MBR3060FCT TO-220-3L Plastic-Encapsulate Diode

FEATURE

Schottky Barrier Chip

Low Power Loss,High Efficiency

Guard Ring Die Construction for Transient Protection

High Surge Capability

High Current Capability and Low Forward Voltage Drop

For Use in Low Voltage, High Frequency Inverters,Free Wheeling,

and Polarity Protection Applications

MAXIMUMRATINGS(Ta=25℃unlessotherwisenoted)

ELECTRICALCHARACTERISTICS(Ta=25℃unlessotherwisespecified)

Typical Characteristics

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