Results formitsubishi rf transistorfrom 4777 Products.
|
|
AD8351ARMZ-REEL7 RF Power Transistor Product Description: The AD8351ARMZ-REEL7 is an advanced silicon bipolar power transistor specifically designed for use in RF power amplifiers ...
china
|
|
|
|
|
Mitsubishi Universal model QD51 Redundant Power Supply Module Model: QD51. BASIC program execution module. QD51 RS-232: 2 channels Mitsubishi QD51 Model: QD62-H01. For replacement ...
|
|
|
|
|
FX3U-128MT/ES-A Japan Mitsubishi PLC Module with 1 year warranty Mitsubishi FX3U-128MT/ES-A Product Specifications PLC Series: FX3U Manufacturer: Mitsubishi Number of Digital ...
|
|
|
|
|
Product Description: MITSUBISHI CM600YE2N-12F power transistor module. This high-performance module is designed to deliver exceptional power handling capabilities for various ...
china
|
|
|
|
|
Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
|
|
|
|
|
HMC536LP2E RF Power Transistor High Performance Low Noise High Gain HMC536LP2E Power Transistor Product Description: The HMC536LP2E is a GaAs pHEMT MMIC power amplifier which ...
china
|
|
|
|
|
PLC Programmable Logic Controller Mitsubishi, FX3GE-40MT/ESS, PLC, 24 IN, 16 OUT, Transistor, 100-240VAC 24 inputs and 16 transistor outputs. 100-240VAC. Expandable. Ethernet ...
|
|
|
|
|
Industrial Control Mistubishi AJ65VBTCE2-16T PLC Controller Programmable 16 output points: 12/24 V DC (0.1 A), transistor output (sink type), 2-wire type Output points: 16 points. ...
|
|
|
|
|
SI4438-C2A-GMR RF Power Transistor Product Features: - Ideal for RF power amplifier applications - High gain and efficiency - Low drive power - High frequency operation - Low ...
china
|
|
|
|
|
CYW43362KUBGT RF Power Transistor 2.4 GHz WLAN CMOS amplifier Package 69-UFBGA Type TxRx + MCU RF Family/Standard WiFi Protocol 802.11b/g/n Modulation 16QAM, 64QAM, BPSK, CCK, DSSS...
china
|
|
|
|
|
CYW20704UA2KFFB1GT RF Power Transistor Single-Chip Bluetooth Transceiver and Baseband Processor Package 49-VFBGA Type TxRx + MCU RF Family/Standard Bluetooth Protocol Bluetooth v4...
china
|
|
|
|
|
HMC915LP4ETR RF Power Transistor - High Performance High Efficiency Product Specifications: - Frequency Range: 9-10GHz - Power Gain: 13 dB - Output Power: 23 dBm - Supply Voltage: ...
china
|
|
|
|
|
BGT60TR13CE6327XUMA1 RF Power Transistor 60 GHz Radar Sensor Package 119-WFBGA Type TxRx Only RF Family/Standard Cellular Protocol LTE Modulation GFSK Frequency 57GHz ~ 64GHz Data ...
china
|
|
|
|
|
Product Listing: SI4355-B1A-FMR RF Power Transistor Features: • High Power Output • Low Noise Figure • High Efficiency • Broadband Operation • Low Distortion • High Reliability • ...
china
|
|
|
|
|
SI4010-C2-GTR RF Power Transistor Product Features: • 900 MHz to 2.7 GHz Frequency Range • 10 W Output Power at 2.4 GHz • 30 V Nominal Drain Voltage • 6.8 dB Typical Gain at 2.4 ...
china
|
|
|
|
|
SI4031-B1-FMR RF Power Transistor Product Specifications: • Maximum Frequency: 4GHz • Maximum Output Power: 22.5W • Maximum Gain: 15dB • Maximum Output Power @ 1dB Compression: 20W ...
china
|
|
|
|
|
SI1000-C-GM RF Power Transistor Features: • High gain • Low noise figure • High power output • Broadband performance • Low heat dissipation • No external bias circuitry required ...
china
|
|
|
|
|
Product Listing: SI4421-A1-FTR Parameters: • Type: RF Power Transistor • Technology: GaN • Package Type: SMD • Operating Voltage: 40V • Operating Frequency: 0.5 - 3 GHz • Output ...
china
|
|
|
|
|
SI1000-E-GM2R RF Power Transistor Features: • 500-1000 MHz Operating Frequency Range • 28V Operating Voltage • 10W Output Power • 6 dB Gain • High Efficiency • Low Noise • Low ...
china
|
|
|
|
|
1. HMC8038LP4CETR RF Power Transistor 2. Features: - High Output Power: > +41 dBm at 1 GHz - High 3rd Order Intercept Point: > +50 dBm at 1 GHz - High Gain: > 18 dB at 1 GHz - Low ...
china
|
|
|
You may also be interested in :
